PD - 96088
IRF7343IPbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8
D1 D1 D2 D2
N-Ch VDSS 55V
P-Ch -55V
2
7
3
6
4
5
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.105Ω
Top View
SO-8
Absolute Maximum Ratings
Parameter
V DS ID @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
N-Channel 55 4.7 3.8 38 2.0 1.3 72 4.7 0.20 ± 20 5.0 -55 to + 150 -5.0 114 -3.4 P-Channel -55 -3.4 -2.7 -27
Units
V A W W mJ A mJ V V/ns °C
Thermal Resistance
RθJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
62.5
Units
°C/W
www.irf.com
1
07/07/06
IRF7343IPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 55 -55 1.0 -1.0 7.9 3.3 Typ. Max. 0.059 0.054 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 2.0 -50 25 -250 ±100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 690 190 210 71 86 Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 10V, I D = 4.5A VDS = -10V, I D = -3.1A VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55°C VDS = -55V, V GS = 0V, TJ = 55°C VGS = ±20V N-Channel I D = 4.5A, VDS = 44V, VGS = 10V P-Channel I D = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 1 6 Ω P-Channel VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 1 6 Ω N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. 0.70 -0.80 60 54 120 85 Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 TJ = 25°C, I F =2.0A, di/dt = 100A/µs 170 nC P-Channel TJ = 25°C, I F = -2.0A, di/dt = 100A/µs 130
Repetitive rating; pulse width limited by
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec. P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A. P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
www.irf.com
N-Channel
100
IRF7343IPbF
VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V TOP
100
10
3.0V
3.0V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
I D , Drain-to-Source Current (A)
TJ = 25 ° C TJ = 150 ° C
10
ISD , Reverse Drain Current (A)
10
TJ = 150 ° C
TJ = 25 ° C
1
1 3 4
V DS = 25V 20µs PULSE WIDTH 5 6
0.1 0.2 0.5 0.8
VGS = 0 V
1.1 1.4
VGS , Gate-to-Source Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
www.irf.com
3
IRF7343IPbF
2.5
N-Channel
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.7A
2.0
R DS (on), Drain-to-Source On Resistance (Ω)
0.120
0.100
1.5
0.080
1.0
VGS = 4.5V
0.060
0.5
VGS = 10V
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
0.040 0 10 20 30 40
TJ , Junction Temperature ( °C)
I D , Drain Current (A)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain Current
0.12
200
RDS(on) , Drain-to-Source On Resistance ( Ω )
EAS , Single Pulse Avalanche Energy (mJ)
TOP
160
BOTTOM
ID 2.1A 3.8A 4.7A
0.10
120
0.08
80
I D = 4.7A
0.06
40
0.04 0 2 4 6 8 10
A
0 25 50 75 100 125 150
V GS , Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature ( °C)
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Maximum Avalanche Energy Vs. Drain Current
4
www.irf.com
N-Channel
1200
IRF7343IPbF
20
1000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 4.5A VDS = 48V VDS = 30V VDS = 12V
16
C, Capacitance (pF)
800
Ciss
12
600
8
400
Coss
200
4
Crss
0 1 10 100
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7343IPbF
100
VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP
P-Channel
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP
10
10
-3.0V
1
-3.0V
1
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
100
-I D , Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
TJ = 25 ° C TJ = 150 ° C
10
10
TJ = 150 ° C TJ = 25 ° C
1
1 3 4 5
V DS = -25V 20µs PULSE WIDTH 6 7
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
-VGS , Gate-to-Source Voltage (V)
-VSD ,Source-to-Drain Voltage (V)
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain Diode Forward Voltage
6
www.irf.com
P-Channel
IRF7343IPbF
2.0
1.5
R DS (on), Drain-to-Source On Resistance(Ω)
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.4 A
0.240
0.200
VGS = -4.5V
0.160
1.0
0.5
0.120
VGS = -10V
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
0.080 0 2 4 6 8 10 12
TJ , Junction Temperature ( °C)
-ID , Drain Current (A)
Fig 16. Normalized On-Resistance Vs. Temperature
Fig 17. Typical On-Resistance Vs. Drain Current
0.45
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
300
250
ID -1.5A -2.7A BOTTOM -3.4A TOP
0.35
200
0.25
150
I D = -3.4 A
0.15
100
50
0.05 2 5 8 11 14
A
0 25 50 75 100 125 150
-V GS , Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature ( °C)
Fig 18. Typical On-Resistance Vs. Gate Voltage
Fig 19. Maximum Avalanche Energy Vs. Drain Current
www.irf.com
7
IRF7343IPbF
1200
P-Channel
20
960
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = -3.1A
16
VDS = -48V VDS = -30V VDS = -12V
C, Capacitance (pF)
720
Ciss
12
480
8
Coss
240
4
Crss
0 1 10 100
0 0 10 20 30 40
--VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM
0.1 0.0001
t1, Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
www.irf.com
IRF7343IPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## (( (% % $ Ã Ã' HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ $ # !& Ã' Ã
9 6 ' & % $
7
% @
$ C !$Ãb dà 6
!
"
#
%Y
r
r
6
FÃÃ#$ 8 Ãb#dà 'YÃG & 'YÃp
'YÃi !$Ãb dÃ
6 867
APPUQSDIU
IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@
'YÃ&!Ãb!'d
%#%Ãb!$$d
"YÃ !&Ãb$d
'YÃ &'Ãb&d
SO-8 Part Marking Information
@Y6HQG@)ÃUCDTÃDTÃ6IÃDSA& ÃHPTA@U 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
www.irf.com
9
IRF7343IPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006
10
www.irf.com
工商网监
湘ICP备2023018690号
