IRF7343QPBF_10

PD - 96110A IRF7343QPBF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET® Power MOSFET D1 D1 D2 D2 S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 N-Ch VDSS 55V P-Ch -55V 6 5 P-CHANNEL MOSFET Top View RDS(on) 0.050Ω 0.105Ω Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 Absolute Maximum Ratings Parameter V DS ID @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation … Maximum Power Dissipation … Single Pulse Avalanche Energy ƒ Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. N-Channel 55 4.7 3.8 38 2.0 1.3 72 4.7 0.20 ± 20 5.0 -55 to + 150 -5.0 114 -3.4 P-Channel -55 -3.4 -2.7 -27 Units V A W W mJ A mJ V V/ns °C Thermal Resistance RθJA Maximum Junction-to-Ambient … Parameter Typ. ––– Max. 62.5 Units °C/W www.irf.com 1 08/09/10 IRF7343QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 55 -55 — — — — — — 1.0 -1.0 7.9 3.3 — — — — –– — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.059 — 0.054 — 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 — — — — — — — — — 2.0 — -2.0 — 25 — -25 — ±100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 — 690 — 190 — 210 — 71 — 86 — Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 4.7A „ VGS = 4.5V, ID = 3.8A „ VGS = -10V, ID = -3.4A „ VGS = -4.5V, ID = -2.7A „ VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 10V, I D = 4.5A „ VDS = -10V, I D = -3.1A „ VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, T J = 55°C VDS = -55V, V GS = 0V, TJ = 55°C VGS = ±20V N-Channel I D = 4.5A, VDS = 44V, VGS = 10V P-Channel I D = -3.1A, V DS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 2 8 Ω P-Channel VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 2 8 Ω N-Channel V GS = 0V, V DS = 25V, ƒ = 1.0MHz P-Channel V GS = 0V, V DS = -25V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC „ ns „ pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. — — — — — — — — — — Typ. — — — — 0.70 -0.80 60 54 120 85 Max. Units Conditions 2.0 -2.0 A 38 -27 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V ƒ V -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V ƒ 90 N-Channel ns 80 TJ = 25°C, I F =2.0A, di/dt = 100A/µs 170 nC P-Channel „ TJ = 25°C, I F = -2.0A, di/dt = 100A/µs 130  Repetitive rating; pulse width limited by Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) ‚ N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec. P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A. P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A. 2 www.irf.com N-Channel 100 IRF7343QPbF VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 3.0V 3.0V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 ISD , Reverse Drain Current (A) 10 TJ = 150 ° C TJ = 25 ° C 1 1 V DS = 25V 20µs PULSE WIDTH 3 4 5 6 0.1 0.2 VGS = 0 V 0.5 0.8 1.1 1.4 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7343QPbF 2.5 N-Channel 2.0 R DS (on), Drain-to-Source On Resistance (Ω) RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.7A 0.120 0.100 1.5 0.080 1.0 VGS = 4.5V 0.5 0.060 VGS = 10V 0.040 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) 0 10 20 30 40 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.12 200 RDS(on) , Drain-to-Source On Resistance ( Ω ) EAS , Single Pulse Avalanche Energy (mJ) TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 0.10 120 0.08 80 0.06 I D = 4.7A 40 0.04 0 2 4 6 8 10 A 0 25 V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com N-Channel 1200 20 IRF7343QPbF ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 Coss 200 4 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7343QPbF 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 10 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP 1 -3.0V -3.0V 1 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 25 ° C TJ = 150 ° C 10 10 TJ = 150 ° C TJ = 25 ° C 1 1 V DS = -25V 20µs PULSE WIDTH 3 4 5 6 7 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel IRF7343QPbF 2.0 1.5 R DS (on) , Drain-to-Source On Resistance(Ω) RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -3.4 A 0.240 0.200 VGS = -4.5V 0.160 1.0 0.5 0.120 VGS = -10V 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.080 0 2 4 6 8 10 12 TJ , Junction Temperature ( °C) -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current 0.45 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( Ω ) 300 250 0.35 ID -1.5A -2.7A BOTTOM -3.4A TOP 200 0.25 150 I D = -3.4 A 0.15 100 50 0.05 2 5 8 11 14 A 0 25 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com 7 IRF7343QPbF 1200 P-Channel 20 960 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = -3.1A 16 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 720 Ciss 12 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7343QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ INT ERNAT IONAL RECTIFIER LOGO XXXX F7101 www.irf.com 9 IRF7343QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 10 www.irf.com