IRF7353D1

PD- 91802A IRF7353D1 FETKY™ MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode q Ideal For Buck Regulator Applications q N-Channel HEXFET q Low VF Schottky Rectifier q Generation 5 Technology q SO-8 Footprint Description q A A S G 1 8 K K D D VDSS = 30V RDS(on) = 0.029Ω Schottky Vf = 0.39V 2 7 3 6 4 5 T op V ie w The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current  Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum 6.5 5.2 52 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient … Notes: Œ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)  Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A Ž ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C  Pulse width ≤ 300µs; duty cycle ≤ 2% … Surface mounted on FR-4 board, t ≤ 10sec. Maximum 62.5 Units °C/W www.irf.com 1 3/17/99 IRF7353D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 — — 1.0 — — — — — — — — — — — — — — — Min. — — — — — Typ. — 0.023 0.032 — 14 — — — — 22 2.6 6.4 8.1 8.9 26 17 650 320 130 Max. Units Conditions — V V GS = 0V, ID = 250µA 0.032 VGS = 10V, ID = 5.8A „ Ω 0.046 VGS = 4.5V, ID = 4.7A „ — V VDS = VGS, ID = 250µA — S VDS = 24V, ID = 5.8A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, VGS = 0V, TJ = 55°C 100 VGS = 20V nA -100 V GS = -20V 33 ID = 5.8A 3.9 nC VDS = 24V 9.6 VGS = 10V (see figure 8) „ 12 VDD = 15V 13 ID = 1.0A ns 39 RG = 6.0Ω 26 R D = 15Ω „ — VGS = 0V — pF VDS = 25V — ƒ = 1.0MHz (see figure 7) Conditions MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Typ. Max. Units — 2.5 A — 30 0.78 1.0 V 45 68 ns 58 87 nC TJ = 25°C, IS = 1.7A, VGS = 0V TJ = 25°C, IF = 1.7A di/dt = 100A/µs Ž Schottky Diode Maximum Ratings IF(av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 2.7 A 1.9 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25°C See Fig. 14 TA = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 92 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 30V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com IRF7353D1 Power Mosfet Characteristics 100 TOP VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 100 TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3 .0V 3 .0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 V D S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 5.8A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C T J = 150°C 10 1.5 1.0 0.5 1 3.0 3.5 4.0 V D S = 1 0V 20µs PULSE WIDTH 4.5 5.0 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 V G S , Gate-to-Source Volta g e (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7353D1 Power Mosfet Characteristics RDS (on) , Drain-to-Source On Resistance (Ω) 0.040 0.036 V G S = 4 .5V RDS (on) , Drain-to-Source On Resistance (Ω) 0.12 0.10 0.08 0.032 0.06 0.028 I D = 5 .8A 0.04 0.024 V G S = 1 0V 0.02 0.020 0 10 20 30 40 A 0.00 0 3 6 9 12 15 A I D , Drain Current (A) V G S , G ate-to-Source Voltage (V) Fig 5. Typical On-Resistance Vs. Drain Current 1200 Fig 6. Typical On-Resistance Vs. Gate Voltage 20 VGS , Gate-to-Source Voltage (V) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd ID = 5.8A VDS = 15V 16 C , Capacitance (pF) 900 C i ss C o ss 12 600 8 300 C r ss 4 0 1 10 100 A 0 0 10 20 30 40 V D S , D rain-to-S ourc e V olta g e ( V ) QG , Total Gate Charge (nC) Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com IRF7353D1 Power Mosfet Characteristics 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 P DM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 I S D , Reverse Drain Current (A) T J = 150°C 10 TJ = 25°C 1 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1.6 V S D , Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage www.irf.com 5 IRF7353D1 Schottky Diode Characteristics 10 100 Reverse Current - IR (mA) 10 TJ = 150°C 125°C 1 100°C 75°C 50°C 0.1 In s ta n ta n e o u s F o rw a rd C u r re n t - I F (A ) 0.01 25°C 0.001 0.0001 0 5 10 15 20 25 30 ) Reverse Voltage - V R (V) 1 T J = 1 5 0 °C T J = 1 2 5 °C TJ = 2 5°C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage A llow able A m b ient Tem p era ture - (°C ) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3 /4 = 1 /2 = 1 /3 = 1 /4 = 1 /5 V r = 8 0 % R ated R t hJA = 6 2 .5° C /W Sq u are w ave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 DC F o rw a rd V o lta g e D ro p - V F M (V ) Forward Voltage Drop - VF (V) Fig. 12 -Typical Forward Voltage Drop Characteristics A A v era g e F orw ard C urrent - I F (AV ) ( A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7353D1 SO-8 Package Details D -B - D IM 5 θ IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A A1 B 5 8 E -A - 7 6 5 H 0.2 5 (.0 10 ) M AM 1 2 3 4 C D E e e1 H K e 6X e1 A θ K x 45 ° .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0° .2 440 .019 .050 8° 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0° 6.20 0 .48 1.27 8° -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L 8X 6 C 8X L θ R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking www.irf.com 7 IRF7353D1 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .484 ) 11 .7 ( .461 ) 8.1 ( .31 8 ) 7.9 ( .31 2 ) F E E D D IR E C T IO N N OTE S : 1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R. 2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 . 3 3 0.00 (12 .992 ) M AX . 14.4 0 ( .5 66 ) 12.4 0 ( .4 88 ) NOTES : 1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541. 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