IRF7353D1PBF

PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A A S G 1 8 K K D D VDSS = 30V RDS(on) = 0.029Ω Schottky Vf = 0.39V 2 7 3 6 4 5 Top View Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum 6.5 5.2 52 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient … Maximum 62.5 Units °C/W Notes:  Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) ‚ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A ƒ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 10/7/04 I RF7353D1PbF MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 — — 1.0 — — — — — — — — — — — — — — — Min. — — — — — Typ. — 0.023 0.032 — 14 — — — — 22 2.6 6.4 8.1 8.9 26 17 650 320 130 Max. Units Conditions — V VGS = 0V, ID = 250µA 0.032 VGS = 10V, ID = 5.8A Ω 0.046 VGS = 4.5V, ID = 4.7A — V VDS = V GS, ID = 250µA — S VDS = 24V, ID = 5.8A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, VGS = 0V, TJ = 55°C 100 VGS = 20V nA -100 VGS = -20V 33 ID = 5.8A 3.9 nC VDS = 24V 9.6 VGS = 10V (see figure 8) 12 VDD = 15V 13 ID = 1.0A ns 39 RG = 6.0Ω 26 RD = 15Ω — VGS = 0V — pF VDS = 25V — ƒ = 1.0MHz (see figure 7) Conditions MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Typ. Max. Units — 2.5 A — 30 0.78 1.0 V 45 68 ns 58 87 nC TJ = 25°C, IS = 1.7A, VGS = 0V TJ = 25°C, IF = 1.7A di/dt = 100A/µs  Schottky Diode Maximum Ratings IF(av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 2.7 A 1.9 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25°C See Fig. 14 TA = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 92 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 30V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com I RF7353D1PbF Power Mosfet Characteristics 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 3.0V 3.0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 V DS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.8A I D , Drain-to-Source Current (A) TJ = 25°C TJ = 150°C 10 1.5 1.0 0.5 1 3.0 3.5 4.0 VDS = 10V 20µs PULSE WIDTH 4.5 5.0 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 I RF7353D1PbF Power Mosfet Characteristics RDS (on) , Drain-to-Source On Resistance (Ω) 0.040 0.036 V GS = 4.5V RDS (on) , Drain-to-Source On Resistance (Ω) 0.12 0.10 0.08 0.032 0.06 0.028 I D = 5.8A 0.04 0.024 V GS = 10V 0.02 0.020 0 10 20 30 40 A 0.00 0 3 6 9 12 15 A I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 5. Typical On-Resistance Vs. Drain Current 1200 Fig 6. Typical On-Resistance Vs. Gate Voltage 20 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = 5.8A VDS = 15V 16 C, Capacitance (pF) 900 Ciss Coss 12 600 8 300 Crss 4 0 1 10 100 A 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com I RF7353D1PbF Power Mosfet Characteristics 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 ISD , Reverse Drain Current (A) TJ = 150°C 10 TJ = 25°C 1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 A 1.6 VSD , Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage www.irf.com 5 I RF7353D1PbF Schottky Diode Characteristics 10 100 Reverse Current - IR (mA) 10 1 0.1 0.01 0.001 0.0001 TJ = 150°C 125°C 100°C 75°C 50°C 25°C Instantaneous Forward Current - IF (A) ) 0 5 10 15 20 25 30 1 TJ = 150°C TJ = 125°C TJ = 25°C Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage Allowable Ambient Temperature - (°C) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 V r = 80% Rated R thJA = 62.5°C/W Square wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 DC Forward Voltage Drop - VFM (V) Forward Voltage Drop - VF (V) Fig. 12 -Typical Forward Voltage Drop Characteristics A 2.0 2.5 3.0 Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com I RF7353D1PbF SO-8 (Fetky) Package Outline D A 5 B (Dimensions are shown in millimeters (inches) DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FETKY) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INTERNATIONAL RECTIFIER LOGO XXXX 807D1 www.irf.com 7 I RF7353D1PbF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com