IRF737LC

PD - 9.1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A HEXFET® Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 6.1 3.9 24 74 0.59 ±30 120 6.1 7.4 3.4 -55 to + 150 300 (1.6mm from case) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 1.7 –––– 62 Units °C/W IRF737LC Electrical Characteristics @ T = 25°C (unless otherwise specified) J V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 300 ––– ––– 2.0 2.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.391 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 6.6 21 13 12 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA 0.75 Ω VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 3.7A 25 VDS = 300V, VGS = 0V µA 250 VDS = 240V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 17 ID = 6.1A 4.8 nC VDS = 240V 7.6 VGS = 10V, See Fig. 6 and 13 ––– VDD = 150V ––– ID = 6.1A ns ––– RG = 12Ω ––– RD = 24Ω, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH from package ––– 7.5 ––– and center of die contact 430 ––– VGS = 0V 120 ––– pF VDS = 25V 9.2 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 320 1.5 6.1 A 24 1.6 490 2.2 V ns µC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 6.1A, VGS = 0V TJ = 25°C, IF = 6.1A di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25°C, L = 5.7mH RG = 25Ω, IAS = 6.1A. (See Figure 12) ISD ≤ 6.1A, di/dt ≤ 270A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF737LC 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 1 4.5V 4.5V 0.1 0.1 0.01 0.1 20µs PULSE WIDTH TC = 25°C 1 10 A 100 0.01 0.1 20µs PULSE WIDTH TC = 150°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 150oC 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 6.1A I D , Drain-to-Sourc e Curr ent ( A) 2.5 10 TJ = 150°C 2.0 1 TJ = 25°C 1.5 1.0 0.1 0.5 0.01 4 5 6 7 VDS = 50V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF737LC 800 700 600 500 400 300 200 100 0 1 10 100 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 6.1A V DS = 240V V DS = 150V V DS = 60V 16 C, Capacitance (pF) Ciss Coss 12 8 4 Crss A 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) 10µs 10 10 TJ = 150°C TJ = 25°C 1 100µs 1 1ms 10ms 0.1 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 0.1 1 TC = 25°C TJ = 150°C Single Pulse 10 100 A 1000 1.4 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF737LC VDS 7.0 RD VGS 6.0 D.U.T. VDD RG ID, Drain Current (Amps) 5.0 10V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 1.0 0.0 25 50 75 100 125 A 150 TC , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Th er mal R es ponse (Z thJC ) 1 D = 0.50 0.20 0.10 PD M 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) N otes : 1. D uty fac to r D = t /t t 1 t2 1 2 0.01 0.00001 2. P ea k T J = P D M x Z th J C + T C A 1 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF737LC EAS , Single Pulse Avalanche Energy (mJ) 240 TOP 200 ID 2.7A 3.9A BOTTOM 6.1A 10 V 160 120 Fig 12a. Unclamped Inductive Test Circuit 80 40 0 VDD = 50V 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 10 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRF737LC Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG • • • • dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRF1010 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 8/95