IRF7380

PD - 94420 IRF7380 HEXFET® Power MOSFET Applications High frequency DC-DC converters VDSS 80V RDS(on) max 73mΩ@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max. 80 ± 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V A W W/°C V/ns °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) * Typ. ––– ––– Max. 20 50 Units °C/W Notes through are on page 8 www.irf.com 1 08/28/02 IRF7380 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 80 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.09 61 ––– ––– ––– ––– ––– ––– ––– 73 4.0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 2.2A V µA VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 4.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 15 2.9 4.5 9.0 10 41 17 660 110 15 710 72 140 ––– 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC S ID = 2.2A VDS = 40V VGS = 10V VDD = 40V ID = 2.2A RG = 24Ω VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 2.2A ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. ––– ––– Max. 75 2.2 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 50 110 3.6 29 1.3 ––– ––– A A V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7380 100 TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 100 TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 BOTTOM 1 BOTTOM 0.1 3.7V 1 3.7V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 1000 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D = 3.6A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 2.0 10 T J = 150°C 1.5 T J = 25°C 1 1.0 VDS = 15V 20µs PULSE WIDTH 0 3.0 4.0 5.0 6.0 7.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7380 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd 12 ID= 2.1A VGS , Gate-to-Source Voltage (V) 10000 10 VDS= 64V VDS= 40V VDS= 16V C, Capacitance(pF) 8 6 1000 Ciss C oss Crss 100 4 10 2 1 1 10 100 0 0 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A) 10 10 100µsec T J= 25 ° C TJ = 150 ° C 1 1 1msec Tc = 25°C Tj = 150°C Single Pulse 10msec V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7380 4.0 VDS VGS 3.0 RD D.U.T. + RG ID , Drain Current (A) -VDD 10V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7380 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 ID , Drain Current (A) RDS(on) , Drain-to -Source On Resistance (m Ω) RDS (on) , Drain-to-Source On Resistance (m Ω ) 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 200 VG VGS 3mA EAS, Single Pulse Avalanche Energy (mJ) TOP 160 Charge IG ID BOTTOM ID 1.0A 1.8A 2.2A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 120 80 15V V(BR)DSS tp VDS L 40 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01Ω Starting TJ, Junction Temperature (°C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7380 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER INTERNATIONAL RECTIFIER LOGO YWW XXXX F7101 www.irf.com 7 IRF7380 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 31mH R G = 25Ω, I AS = 2.2A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02 8 www.irf.com