IRF740A

PD- 92004 SMPS MOSFET IRF740A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 400V Rds(on) max 0.55Ω ID 10A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) l TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 10 6.3 40 125 1.0 ± 30 5.9 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) through … are on page 8 Notes  www.irf.com 1 9/14/99 IRF740A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 400 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.48 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, I D = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.55 Ω VGS = 10V, ID = 6.0A „ 4.0 V VDS = VGS, ID = 250µA 25 VDS = 400V, VGS = 0V µA 250 VDS = 320V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 10 35 24 22 1030 170 7.7 1490 52 61 Max. Units Conditions ––– S VDS = 50V, ID = 6.0A 36 ID = 10A 9.9 nC VDS = 320V 16 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 200V ––– ID = 10A ns ––– RG = 10Ω ––– RD = 19.5Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 320V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 320V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 630 10 12.5 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– Max. 1.0 ––– 62 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 10 ––– ––– showing the A G integral reverse ––– ––– 40 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 10A, VGS = 0V „ ––– 240 360 ns TJ = 25°C, IF = 10A ––– 1.9 2.9 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF740A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 1 0.1 4.5V 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID = 10A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 10 2.0 TJ = 150 ° C 1.5 1 1.0 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.5 0.1 4.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF740A 20 100000 ID = 10A VDS = 320V VDS = 200V VDS = 80V VGS , Gate-to-Source Voltage (V) 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + C ds gd 16 C, Capacitance(pF) 1000 Ciss 12 100 Coss 8 10 Crss 4 1 1 10 100 1000 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10us 10 I D , Drain Current (A) TJ = 150 ° C TJ = 25 ° C 1 100us 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF740A 10.0 VDS VGS RD 8.0 D.U.T. + RG I D , Drain Current (A) -VDD 6.0 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF740A 1 5V 1400 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1200 VDS L D R IV E R ID 4.5A 6.3A 10A 1000 RG 20V tp D .U .T IA S + V - DD 800 A 0 .0 1 Ω 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V DSav , Avalanche Voltage ( V ) 580 560 Charge 540 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 520 50KΩ 12V .2µF .3µF 500 D.U.T. VGS 3mA + V - DS 480 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 IAV , Avalanche Current ( A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRF740A Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF740A Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A 6.47 (.255) 6.10 (.240) -B 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LE AD A S SIG NME NT S 1 - GA TE 2 - DR A IN 3 - S OU RCE 4 - DR A IN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X N OT ES : 1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I Y14.5M, 1982. 2 CO NT RO LLING D IMEN S ION : IN CH 2.92 (.115) 2.64 (.104) 3 OUT LINE C ONF O RMS T O JED EC O UT LIN E TO -220A B. 4 HE A TS IN K & LE A D ME AS UR E MEN TS D O NO T INC LU DE B U RRS . Part Marking Information TO-220AB E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT CO DE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LO GO ASS EM BLY LOT CODE P ART NUM BER IR F 1 0 1 0 9246 9B 1M D ATE COD E (Y Y W W ) Y Y = YE A R W W = W EEK Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 12.6mH TJ ≤ 150°C RG = 25Ω, IAS = 10A. (See Figure 12) ƒ ISD ≤ 10A, di/dt ≤ 330A/µs, VDD ≤ V(BR)DSS, WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99 8 www.irf.com