IRF7410

PD - 94025 IRF7410 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -12V RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 07/11/01 IRF7410 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 ––– ––– ––– ––– -0.4 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.006 ––– ––– ––– ––– ––– ––– ––– ––– ––– 91 18 25 13 12 271 200 8676 2344 1604 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 7 VGS = -4.5V, I D = -16A ‚ mΩ VGS = -2.5V, ID = -13.6A ‚ 9 13 VGS = -1.8V, ID = -11.5A ‚ -0.9 V VDS = VGS , ID = -250µA ––– S VDS = -10V, I D = -16A -1.0 VDS = -9.6V, VGS = 0V µA -25 VDS = -9.6V, VGS = 0V, T J = 70°C -100 nA VGS = -8V 100 VGS = 8V ––– ID = -16A ––– nC VDS = -9.6V ––– VGS = -4.5V ‚ 20 VDD = -6V, VGS = -4.5V ns 18 ID = -1.0A 407 RD = 6Ω 300 RG = 6Ω ‚ ––– VGS = 0V ––– pF VDS = -10V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 97 134 -2.5 A -65 -1.2 145 201 V ns µC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, IF = -2.5A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7410 100 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP 100 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 -1.0V 20µs PULSE WIDTH Tj = 150°C 1 -1.0V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics TJ = 150 ° C  RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -16A  -I D , Drain-to-Source Current (A) 1.5 10 1.0 TJ = 25 ° C  0.5 1 1.0 V DS = -10V  20µs PULSE WIDTH 1.2 1.4 1.6 1.8 2.0 0.0 -60 -40 -20 VGS = -4.5V  0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7410 14000 12000 6 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd ID = -16A  5  V DS = -9.6V C, Capacitance(pF) 10000 8000 6000 4000 2000 0 1 Ciss Coss = Cds + Cgd 4 3 2 Coss Crss 1 0 10 100 0 20 40 60 80 100 120 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) TJ = 150 ° C  10 OPERATION IN THIS AREA LIMITED BY R  DS(on) -ID , Drain Current (A) I 100  100us  1ms 10 TJ = 25 ° C  1  10ms 0.1 0.2 V GS = 0 V  0.4 0.6 0.8 1.0 1 0.1  TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7410 16 VDS VGS RD -ID , Drain Current (A) 12 D.U.T. + VGS 8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - RG VDD 5 IRF7410 ( RDS ( on ) , Drain-to-Source On ResistanceΩ ) ( RDS(on), Drain-to -Source On Resistance Ω ) 0.010 0.02 0.008 0.015 VGS = -1.8V 0.01 VGS = -2.5V 0.005 VGS = -4.5V 0 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 -ID , Drain Current ( A ) 0.006 ID = -16A 0.004 0.002 0.0 2.0 4.0 6.0 8.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7410 1.0 700 600 0.8 500 -VGS(th) ( V ) Power (W) ID = -250µA 0.6 400 300 200 0.4 100 0 -75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 0.2 TJ , Temperature ( °C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7410 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 IRF7410 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( . 48 4 ) 1 1 .7 ( . 46 1 ) 8 .1 ( . 31 8 ) 7 .9 ( . 31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 3 3 0.0 0 ( 1 2 .9 9 2 ) M AX . 1 4 .4 0 ( . 5 66 ) 1 2 .4 0 ( . 4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/01 www.irf.com 9