IRF7413QPBF

PD - 96112 IRF7413QPbF l l l l l l l l HEXFET® Power MOSFET A A D D D D Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S S S G 1 2 3 4 8 7 VDSS = 30V RDS(on) = 0.011Ω 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C EAS dv/dt TJ, TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energency Peak Diode Recovery dv/dt Max 30 ± 20 13 9.2 58 2.5 0.02 260 5.0 -55 to +150 Units V A W mW/°C mJ V/ns °C c e d Junction and Storage Temperature Range Thermal Resistance Ratings Symbol RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient h gh Parameter Typ ––– ––– Max 20 50 Units °C/W www.irf.com 1 07/23/07 IRF7413QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 30 ––– ––– ––– 1.0 10 ––– ––– ––– ––– ––– ––– ––– 1.2 ––– ––– ––– ––– ––– ––– ––– Ty p ––– 0.034 ––– ––– ––– ––– ––– ––– ––– ––– 52 6.1 16 ––– 8.6 50 52 46 1800 680 240 Max ––– ––– 0.011 0.018 3.0 ––– 12 25 -100 100 79 9.2 23 3.7 ––– ––– ––– ––– ––– ––– ––– Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.3A VGS = 4.5V, ID = 3.7A VDS = VGS, ID = 250µA VDS = 10V, ID = 3.7A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = 7.3A VDS = 24V VGS = 10V, See Fig. 6 and 9 f f nC f ns pF VDD = 15V ID = 7.3A RG = 6.2 Ω RG = 2.0Ω, See Fig. 10 VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 f Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 74 200 Max. 3.1 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.3A, VGS = 0V TJ = 25°C, IF = 7.3A di/dt = 100A/µs Ù 58 1.0 110 300 V ns nC e e Notes:  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L =9.8mH max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Surface mounted on FR-4 board † Rθ is measured at TJ approximately 90°C T J ≤ 150°C RG = 25Ω, IAS =7.3A. (See Figure 12) www.irf.com 2 IRF7413QPbF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 3.0V 3.0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 V DS , Drain-to-Source Voltage (V) V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 7.3A I D , Drain-to-Source Current (A) 1.5 TJ = 150°C TJ = 25°C 10 1.0 0.5 1 3.0 3.5 V DS = 10V 20µs PULSE WIDTH 4.0 4.5 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7413QPbF 3200 2800 2400 2000 1600 1200 800 400 0 1 10 100 Coss V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd 20 I D = 7.3A V DS = 24V V DS = 15V 16 C, Capacitance (pF) 12 8 Crss 4 A 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 9 40 50 60 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150°C 10 ID , Drain Current (A) TJ = 25°C 100 100us 10 1ms 1 0.4 1.2 2.0 2.8 VGS = 0V A 3.6 1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 10ms 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRF7413QPbF QG V DS VGS RG 10V RD 10V VG QGS QGD D.U.T. + - VDD Charge Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50KΩ 12V .2µF .3µF 90% + V - DS D.U.T. VGS 3mA 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 100 Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.1 1 10 100 10 0.1 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7413QPbF EAS , Single Pulse Avalanche Energy (mJ) 600 TOP 500 15V BOTTOM ID 3.3A 6.0A 7.3A VDS L DRIVER 400 RG 20V D.U.T IAS tp + - VDD 300 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( o C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms www.irf.com 6 IRF7413QPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRF7413QPbF SO-8 Package Details Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ $ # 7 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ à Ã'ƒ HDGGDH@U@ST HDI H6Y &$ "$ !$   $ ""  ( !$ $ #' # "' !&ÃÃ76TD8 %"$ÃÃ76TD8 %! $' $ !$ !& # à Ã'ƒ % @ C !$Ãb dà 6 %Y r r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ APPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@Ã8P9@Ã`XX QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S 8 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com IRF7413QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2007 9