IRF7421D1

PD- 91411C PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint IRF7421D1 8 7 FETKY™ MOSFET / Schottky Diode l l l l A S S G 1 A A D D D D 2 VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.39V 3 6 4 5 T o p V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10V Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum 5.8 4.6 46 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient  Maximum 62.5 Units °C/W Notes: Œ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)  ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Ž Pulse width ≤ 300µs; duty cycle ≤ 2%  Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 8/20/98 7421d1.p65 1 8/20/98, 4:07 PM I RF7421D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 — — 1.0 4.6 — — — — — — — — — — — — — — Typ. — 0.026 0.040 — — — — — — 18 2.2 5.9 6.7 27 20 16 510 200 84 Max. Units Conditions — V VGS = 0V, ID = 250µA 0.035 VGS = 10V, ID = 4.1A ƒ Ω 0.060 VGS = 4.5V, ID = 2.1A ƒ — V VDS = VGS, ID = 250µA — S VDS = 15V, ID = 2.1A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V 27 ID = 4.1A 3.3 nC VDS = 24V 8.9 VGS = 10V (see figure 10) Ž — VDD = 15V — ID = 4.1A ns — RG = 6.2Ω — RD = 3.7Ω Ž — VGS = 0V — pF VDS = 25V — ƒ = 1.0MHz (see figure 9) Conditions 2 MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) — — 3.1 A I SM Pulsed Source Current (Body Diode) — — 33 VSD Body Diode Forward Voltage — — 1.0 V trr Reverse Recovery Time (Body Diode) — 57 86 ns Q rr Reverse Recovery Charge — 93 140 nC TJ = 25°C, IS = 4.1A, VGS = 0V TJ = 25°C, IF = 4.1A di/dt = 100A/µs Ž Schottky Diode Maximum Ratings IF(av) I SM P arameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 1.7 A 1.2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25°C TA = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications V FM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 110 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 30V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com 7421d1.p65 2 8/20/98, 4:07 PM 2 Power Mosfet Characteristics 100 V GS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I RF7421D1 100 I D , D rain-to-S ource C urrent (A ) 10 I D, D rain-to-S ource C urrent (A ) V GS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOT TOM 3.0V TOP 10 3 .0V 3 .0V 1 0.1 1 2 0µ s P U LS E W ID TH TJ = 25°C A 10 1 0.1 1 2 0µ s P U LS E W ID TH TJ = 1 50°C A 10 V D S , D rain-to-S ource V olta g e (V ) V D S , D rain-to-S ourc e V o lta g e (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , D ra in -to-S o urc e C urren t (A ) TJ = 2 5 °C 10 TJ = 1 5 0 °C I S D , R everse D rain C urrent (A ) 10 TJ = 150°C TJ = 25°C 1 3.0 3.5 4.0 4.5 V DS = 1 0V 2 0 µ s P U L S E W ID T H 5.0 5.5 6.0 A 1 0.4 0.8 1.2 1.6 V G S = 0V 2.0 A 2.4 V G S , G a te -to -S o u rc e V o lta g e ( V ) V S D , S ource-to-D rain V olta g e (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 7421d1.p65 3 8/20/98, 4:07 PM I RF7421D1 Power Mosfet Characteristics R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = 4 .1A 1.5 RDS (on) , Drain-to-Source On Resistance (Ω) 2.0 0.2 VGS = 4.5V 1.0 0.1 0.5 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 VGS =10V 0.0 0 5 10 15 20 25 30 35 140 160 A A T J , Junction T em perature (°C ) I , , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.07 100 RDS (on) , Drain-to-Source On Resistance (Ω) O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on) 0.06 I D , D rain C urrent (A ) 0.05 10 100µ s 0.04 I = 5.8A 1m s 0.03 1 10m s 0.02 0.01 3 6 9 12 15 A 0.1 T A = 2 5°C T J = 150°C S ingle P ulse 0.1 1 10 100 A V /5 , Gate-to-Source Voltage (V) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com 7421d1.p65 4 8/20/98, 4:07 PM I RF7421D1 Power Mosfet Characteristics 1000 V G S , G ate-to-S ource V oltage (V ) 800 V GS C iss C rss C oss = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd 20 I D = 4.1A V D S = 2 4V V D S = 15V 16 C , C apacitanc e (pF ) C is s 600 C oss 12 400 8 C rs s 200 4 0 1 10 100 A 0 0 5 10 15 F O R TE S T C IR C U IT S E E FIG U R E 9 20 25 30 A V D S , D rain-to -S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 7421d1.p65 5 8/20/98, 4:07 PM I RF7421D1 Schottky Diode Characteristics 10 100 Reverse Current - IR (mA) 10 TJ = 150°C 125°C 1 100°C 75°C 50°C 0.1 In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 0.01 25°C 0.001 0.0001 0 5 10 15 20 25 30 ) Reverse Voltage - V R (V) 1 T J = 1 5 0 °C T J = 1 2 5 °C T J = 2 5 °C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Ju n ctio n C a p a cita n ce - C T 0.1 0.0 0.2 0.4 0.6 0.8 1.0 100 (p F ) F o rw a rd V o lta g e D ro p - V F M (V ) TJ = 2 5 °C Fig. 12 -Typical Forward Voltage Drop Characteristics 10 0 10 20 A 30 R e ve rse V o lta g e - V R (V ) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com 7421d1.p65 6 8/20/98, 4:07 PM I RF7421D1 SO-8 Package Details D -B- D IM 5 θ IN C H E S M IN .05 32 .00 40 .01 4 .0 0 75 .1 8 9 .15 0 MAX .06 88 .00 98 .01 8 .0 09 8 .1 96 .15 7 M IL LIM E T E R S M IN 1 .3 5 0 .1 0 0 .3 6 0 .19 4 .80 3 .8 1 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A A1 B 5 8 E -A- 7 6 5 H 0.25 (.010) M AM 1 2 3 4 C D E e e1 H K e 6X e1 A θ K x 45° .05 0 B A S IC .02 5 B A S IC .2 2 84 .01 1 0 .16 0° .2 44 0 .01 9 .05 0 8° 1.2 7 B A S IC 0 .6 35 B A S IC 5 .8 0 0 .2 8 0 .4 1 0° 6.20 0 .48 1.27 8° -CB 8X 0.25 (.010) N O TE S : A1 M CASBS 0.10 (.004) L 8X 6 C 8X L θ R E C O M M E N D E D F O O TP R IN T 0.72 (.028 ) 8X 1. D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982. 2. C O N T R O LLIN G D IM E N S IO N : IN C H . 3. D IM E N S IO N S A R E S H O W N IN M ILLIM E TE R S (IN C H E S ). 4. O U TLIN E C O N F O R M S TO JE D E C O U TLIN E M S -012A A . 5 D IM E N S IO N D O E S N O T IN C LU D E M O LD P R O TR U S IO N S M O LD P R O TR U S IO N S N O T TO E XC E E D 0.25 (.006). 6 D IM E N S IO N S IS TH E LE N G TH O F LE A D F O R S O LD E R IN G TO A S U B S TR A TE .. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking (IRF7101 example ) www.irf.com 7 7421d1.p65 7 8/20/98, 4:07 PM I RF7421D1 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371 Data and specifications subject to change without notice. 8/98 8 www.irf.com 7421d1.p65 8 8/20/98, 4:07 PM