IRF7433

PD -94056 IRF7433 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -12V RDS(on) max 24mΩ@VGS = -4.5V 30mΩ@VGS = -2.5V 46mΩ@VGS = -1.8V ID -8.7A -7.4A -6.3A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -8.9 -7.1 -36 2.5 1.6 0.02 ±8 -55 to +150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 12/15/00 IRF7433 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 ––– ––– ––– ––– -0.4 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.007 ––– ––– ––– ––– ––– ––– ––– ––– ––– 20 4.5 4.0 8.8 8.2 272 175 1877 512 310 Max. Units Conditions ––– V V GS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 24 VGS = -4.5V, ID = -8.7A ‚ mΩ VGS = -2.5V, ID = -7.4A ‚ 30 46 VGS = -1.8V, ID = -6.3A ‚ -0.9 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -8.7A -1.0 VDS = -9.6V, VGS = 0V µA -25 VDS = -9.6V, VGS = 0V, TJ = 70°C -100 nA VGS = -8V 100 VGS = 8V ––– ID = -8.7A ––– nC VDS = -6V ––– VGS = -4.5V ‚ 13 VDD = -6V, VGS = -4.5V ns 12 ID = -1.0A 408 RD = 6Ω 263 R G = 6Ω ‚ ––– VGS = 0V ––– pF VDS = -10V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 36 28 -2.5 A -36 -1.2 54 42 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V ‚ TJ = 25°C, I F = -2.5A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on 1 inch square copper board, t < 10 sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7433 100 VGS TOP -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 100 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 -1.2V 1 1 -1.2V 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -8.7A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 10 1.0 TJ = 25 ° C V DS = -10V 20µs PULSE WIDTH 1.5 2.0 2.5 0.5 1 1.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7433 3200 2800 6 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd ID = -8.7A 5 V DS = -9.6V V DS = -6V C, Capacitance(pF) 2400 2000 1600 1200 800 400 0 1 Ciss 4 3 2 Coss Crss 1 0 10 100 0 5 10 15 20 25 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) -ID , Drain Current (A) I 100us 10 TJ = 150 ° C TJ = 25 ° C 10 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7433 9.0 VDS 7.5 RD VGS RG -ID , Drain Current (A) D.U.T. + 6.0 4.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 3.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 1.5 VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 1 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7433 ( RDS ( on ) , Drain-to-Source On Resistance Ω ) ( RDS(on), Drain-to -Source On Resistance Ω ) 0.050 0.15 0.040 0.12 VGS = -1.8V 0.09 0.030 ID = -8.7A 0.020 0.06 VGS = -2.5V 0.03 VGS = -4.5V 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 -ID , Drain Current ( A ) 0.010 0.0 2.0 4.0 6.0 8.0 10.0 0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7433 1.0 300 0.8 -VGS(th) ( V ) 200 ID = -250µA 0.6 Power (W) 100 0 150 0.0001 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 TJ , Temperature ( °C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7433 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 IRF7433 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 3 3 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 www.irf.com 9