IRF7452QPBF_10

PD - 96113A IRF7452QPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S S S G VDSS 100V RDS(on) max 0.060Ω ID 4.5A Description These HEXFET® Power MOSFET's in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 4.5 3.6 36 2.5 0.02 ± 30 3.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input with Passive Reset Forward Converter Primary Notes  through † are on page 8 www.irf.com 08/09/10 1 IRF7452QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 100 ––– ––– 3.0 ––– ––– ––– ––– Min. 3.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– Typ. ––– 33 7.3 16 9.5 11 16 13 930 300 84 1370 170 280 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.060 Ω VGS = 10V, ID = 2.7A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 24V nA -100 VGS = -24V Max. Units Conditions ––– S VDS = 50V, ID = 2.7A 50 ID = 2.7A 11 nC VDS = 80V 24 VGS = 10V, „ ––– VDD = 50V ––– ID = 2.7A ns ––– RG = 6.0Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 200 4.5 0.25 Units mJ A mJ Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient† Typ. ––– Max. 50 Units °C/W Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 77 270 2.3 A 36 1.3 120 410 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.7A, VGS = 0V TJ = 25°C, IF = 2.7A di/dt = 100A/µs „ D S „ 2 www.irf.com IRF7452QPbF 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) 10 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1 1 5.0V 0.1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.5A I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 ° C 1.5 1 TJ = 25 ° C 1.0 0.5 0.1 5.0 V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7452QPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 2.7A VDS = 80V VDS = 50V VDS = 20V VGS , Gate-to-Source Voltage (V) C ds 16 10000 C, Capacitance(pF) 12 1000 Ciss Coss 8 100 Crss 4 10 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 10us 10 100us 1ms 1 10ms TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7452QPbF 5.0 VDS 4.0 RD VGS RG ID , Drain Current (A) D.U.T. + 3.0 -V DD 10V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 Thermal Response (Z thJA ) 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7452QPbF RDS(on) , Drain-to -Source On Resistance ( Ω ) RDS (on) , Drain-to-Source On Resistance ( Ω ) 0.06 0.08 VGS = 10V 0.07 0.05 VGS = 15V 0.06 ID = 2.7A 0.05 0.04 0 4 8 12 16 20 ID , Drain Current (A) 0.04 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 500 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 400 Charge IG ID BOTTOM ID 2.0A 3.6A 4.5A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01Ω Starting TJ , Junction Temperature ( °C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7452QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] F OOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DATE CODE (YWW) P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY SIT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ INTERNATIONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7452QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t