IRF7456PBF

PD - 95249 SMPS MOSFET IRF7456PbF HEXFET® Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free l VDSS 20V RDS(on) max 0.0065Ω ID 16A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 16 13 130 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient„ Max. 50 Units °C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through „ are on page 8 www.irf.com 1 10/12/04 IRF7456PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.024 ––– V/°C Reference to 25°C, ID = 1mA 0.00470.0065 VGS = 10V, ID = 16A ƒ Ω 0.00570.0075 VGS = 4.5V, ID = 13A ƒ 0.011 0.020 VGS = 2.8V, ID = 3.5A ƒ ––– 2.0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 12V nA ––– -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 41 9.7 18 20 25 50 52 3640 1570 330 Max. Units Conditions ––– S VDS = 10V, ID = 16A 62 ID = 16A 15 nC VDS = 16V 27 VGS = 5.0V, ƒ ––– VDD = 10V ––– ID = 1.0A ns ––– RG = 6.0Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 250 16 0.25 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 48 74 2.5 A 130 1.2 72 110 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.5A, VGS = 0V TJ = 25°C, IF = 2.5A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7456PbF 1000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP 10 1 2.0V 1 0.1 0.1 0.1 2.0V 1 20µs PULSE WIDTH TJ = 25 °C 10 100 20µs PULSE WIDTH TJ = 150 °C 10 100 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 100.0 T J = 150°C ID, Drain-to-Source Current (Α ) RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 16A 1.5 10.0 T J = 25°C 1.0 1.0 0.5 0.1 2.0 2.2 2.4 VDS = 15V 20µs PULSE WIDTH 2.6 2.8 3.0 3.2 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7456PbF 6000 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = 16A VDS = 16V 10 C, Capacitance (pF) 4000 Ciss 8 3000 6 2000 Coss 4 1000 2 Crss 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 ° C 10 10us 100 100us TJ = 25 ° C 1 1ms 10 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7456PbF 20 VDS 15 RD VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % ID , Drain Current (A) D.U.T. + -V DD 10 5 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM t1 t2 Thermal Response (Z thJA ) 0.01 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7456PbF RDS (on) , Drain-to-Source On Resistance ( Ω ) 0.0062 VGS = 4.5V RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.012 0.0058 0.010 0.0054 0.008 0.0050 VGS = 10V 0.006 ID = 16A 0.0046 0 20 40 60 80 100 ID , Drain Current (A) 0.004 0 4 8 12 16 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 600 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 500 Charge IG ID BOTTOM ID 7.2A 10A 16A Current Sampling Resistors 400 Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 I AS tp 0.01Ω Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7456PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 7 IRF7456PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.0mH RG = 25Ω, IAS = 16A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t