IRF7459PBF

PD - 95459A SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l IRF7459PbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.0mΩ ID 12A High Frequency Buck Converters for Computer Processor Power Lead-Free A A D D D D Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 12 10 100 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient † Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 4/17/06 IRF7459PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.024 6.7 8.0 11 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA 9.0 VGS = 10V, ID = 12A ƒ 11 mΩ VGS = 4.5V, ID = 9.6A ƒ 22 VGS = 2.8V, ID = 6.0A ƒ 2.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 32 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 23 6.6 6.3 17 10 4.5 20 5.0 2480 1030 130 Max. Units Conditions ––– S VDS = 16V, ID = 9.6A 35 ID = 9.6A 10 nC VDS = 10V 9.5 VGS = 4.5V ƒ 26 VGS = 0V, VDS = 10V ––– VDD = 10V, ––– ID = 9.6A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 290 12 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 2.5 A 100 1.3 ––– 105 105 105 113 V ns nC ns nC VSD trr Qrr trr Qrr ––– 0.84 ––– 0.69 ––– 70 ––– 70 ––– 70 ––– 75 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 9.6A, VGS = 0V ƒ TJ = 125°C, IS = 9.6A, VGS = 0V TJ = 25°C, IF = 9.6A, V R= 15V di/dt = 100A/µs ƒ TJ = 125°C, IF = 9.6A, VR=15V di/dt = 100A/µs ƒ 2 www.irf.com IRF7459PbF 1000 VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP 10 10 2.0V 1 2.0V 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 12A I D , Drain-to-Source Current (A) 1.5 100 TJ = 150 ° C 1.0 10 TJ = 25 ° C 0.5 1 2.0 V DS = 15V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7459PbF 4000 3200 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 9.6A VDS = 10V 8 C, Capacitance (pF) Ciss 2400 6 1600 4 Coss 800 2 Crss 0 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 150 ° C 10 100 10us 100us TJ = 25 ° C 1 10 1ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 0.1 TA = 25 ° C TJ = 150° C Single Pulse 1 10 10ms 100 VSD,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7459PbF 15 VDS V GS RD 12 RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + I D , Drain Current (A) - VDD 9 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7459PbF R DS (on) , Drain-to-Source On Resistance ( Ω ) RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.010 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 2.0 2.5 3.0 3.5 4.0 4.5 0.009 VGS = 4.5V ID = 12A 0.008 VGS = 10V 0.007 0 20 40 60 80 100 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 14. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 700 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 600 Charge IG ID BOTTOM 500 400 300 200 100 0 25 50 75 100 125 ID 4.3A 7.7A 9.6A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + V - DD 150 A I AS tp 0.01Ω Starting TJ , Junction Temperature ( °C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7459PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % à $ Ã'ƒ HDGGDH@U@ST HDI H6Y "$ &$   !$ "" $  ( !$ #' $ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ $ # à !& Ã'ƒ 9 6 ' & % $ 7 % @ $ C !$Ãb dà 6 ! 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CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t