IRF7470

PD- 93913C SMPS MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification IRF7470 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 40 ± 12 10 8.5 85 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 3/25/01 IRF7470 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 40 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.8 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units ––– ––– V 0.04 ––– V/°C 9.0 13 10 15 mΩ 14.5 30 ––– 2.0 V ––– 20 µA ––– 100 ––– 200 nA ––– -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 10A „ VGS = 4.5V, ID = 8.0A „ VGS = 2.8V, ID = 5.0A „ VDS = VGS, ID = 250µA VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, T J = 125C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 27 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 29 7.9 8.0 23 10 1.9 21 3.2 3430 690 41 Max. Units Conditions ––– S VDS = 20V, ID = 8.0A 44 ID = 8.0A 12 nC VDS = 20V 12 VGS = 4.5V ƒ 35 VGS = 0V, VDS = 16V ––– VDD = 20V ––– ID = 8.0A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 20V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 300 8.0 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 2.3 A 85 1.3 ––– 110 200 110 230 V ns nC ns nC VSD trr Qrr trr Qrr ––– 0.80 ––– 0.65 ––– 72 ––– 130 ––– 76 ––– 150 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V ƒ TJ = 125°C, IS = 8.0A, VGS = 0V TJ = 25°C, IF = 8.0A, VR= 20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 8.0A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRF7470 1000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP 100 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP 2.0V 10 10 2.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 10A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C 10 1.5 1.0 0.5 1 2.0 V DS = 25V 20µs PULSE WIDTH 2.2 2.4 2.6 2.8 3.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7470 100000 10 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 8.0A VDS = 32V VDS = 20V VGS , Gate-to-Source Voltage (V) 8 10000 C, Capacitance(pF) Ciss 1000 6 Coss 4 100 2 Crss 10 1 10 100 0 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) TJ = 150 ° C 10 I D , Drain Current (A) 100 10us TJ = 25 ° C 1 100us 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7470 10.0 VDS 8.0 RD VGS RG D.U.T. + I D , Drain Current (A) -VDD 6.0 10V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7470 R DS (on) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.030 0.020 0.018 0.025 0.016 0.020 0.014 VGS = 2.7V 0.015 VGS = 4.5V 0.010 0 10 20 30 VGS = 10V 40 50 60 ID = 10A 0.012 0.010 2 4 6 8 10 12 14 16 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 800 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA TOP BOTTOM 600 Charge IG ID ID 3.6A 6.4A 8.0A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 400 15 V 200 V (B R )D S S tp VD S L DRIVE R RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 A Starting TJ , Junction Temperature ( °C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7470 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7470 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t