IRF7471

PD- 94036B SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current IRF7471 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 3/25/01 IRF7471 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.5 13 VGS = 10V, ID = 10A ƒ mΩ Static Drain-to-Source On-Resistance ––– 12 16 VGS = 4.5V, ID = 8.0A ƒ Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 VDS = 32V, VGS = 0V Drain-to-Source Leakage Current µA ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 7.2 8.2 23 12 2.7 15 4.1 2820 700 46 Max. Units Conditions ––– S VDS = 20V, ID = 8.0A 32 ID = 8.0A 11 nC VDS = 20V 12 VGS = 4.5V ƒ 35 VGS = 0V, VDS = 16V ––– VDD = 20V ––– ID = 8.0A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 20V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 300 8.0 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 2.3 A 83 1.3 ––– 100 200 110 240 V ns nC ns nC VSD trr Qrr trr Qrr ––– 0.80 ––– 0.65 ––– 69 ––– 130 ––– 73 ––– 160 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V ƒ TJ = 125°C, IS = 8.0A, VGS = 0V TJ = 25°C, IF = 8.0A, VR= 20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 8.0A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRF7471 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 1 10 2.7V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 10A I D , Drain-to-Source Current (A) 2.0 TJ = 150 ° C 1.5 10 TJ = 25 ° C 1.0 0.5 1 2.0 V DS = 25V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7471 100000 10 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd ID = 8.0A VDS = 32V VDS = 20V VGS , Gate-to-Source Voltage (V) 8 10000 C, Capacitance(pF) Ciss 1000 6 Coss 4 100 Crss 2 10 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) TJ = 150 ° C OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 10us 100us 10 1ms TJ = 25 ° C 1 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 1 1 TA = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7471 12 VDS 10 RD VGS RG D.U.T. + I D , Drain Current (A) 8 -VDD 6 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7471 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS (on) , Drain-to-Source On Resistance ( Ω ) 0.020 0.020 0.018 0.018 0.016 VGS = 4.5V 0.014 0.016 0.014 ID = 10A 0.012 0.012 VGS = 10V 0.010 0 20 40 60 80 100 ID , Drain Current (A) 0.010 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 800 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA TOP BOTTOM 600 Charge IG ID ID 3.6A 6.4A 8.0A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 400 15 V 200 V (B R )D S S tp VD S L DRIVE R RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 A Starting TJ , Junction Temperature ( °C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7471 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7471 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. ‚ Starting TJ = 25°C, L = 9.4mH RG = 25Ω, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com