IRF7474

PD- 94097 IRF7474 HEXFET® Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 63mΩ@VGS = 10V ID 4.5A S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 4.5 3.6 36 2.5 0.02 ± 20 5.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 9/3/01 IRF7474 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.5 ––– ––– ––– ––– Typ. ––– 0.11 50 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 63 mΩ VGS = 10V, ID = 2.7A ƒ 5.5 V VDS = VGS, ID = 250µA 1.0 VDS = 95V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 27 10 9.0 14 7.9 16 5.9 1400 100 56 380 68 110 Max. Units Conditions ––– S VDS = 50V, ID = 2.7A 41 ID = 2.7A ––– nC VDS = 50V ––– VGS = 10V, ––– VDD = 50V ––– ID = 2.7A ns ––– RG = 6.0Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 51 2.7 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 45 100 2.3 A 36 1.3 ––– ––– V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.7A, VGS = 0V TJ = 25°C, IF = 2.7A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7474 100 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 100 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 10 1 5.5V 5.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 175 ° C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.5A I D , Drain-to-Source Current (A) 2.0 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 5.0 V DS = 25V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7474 100000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd ID = 2.7A VDS = 80V VDS = 50V VDS = 20V VGS , Gate-to-Source Voltage (V) 16 10000 C, Capacitance(pF) 12 Ciss 1000 Coss 100 8 Crss 4 10 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) TJ = 150 ° C 10 ID , Drain-to-Source Current (A) 10 100µsec 1 1 TJ = 25 ° C 1msec Tc = 25°C Tj = 150°C Single Pulse 1 10 10msec 100 1000 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7474 5.0 VDS 4.0 RD VGS RG D.U.T. + I D , Drain Current (A) -VDD 3.0 10V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 10 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7474 R DS ( on) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.30 0.07 0.25 0.20 0.06 0.15 VGS = 10V 0.10 0.05 ID = 2.7A 0.05 0.00 0 20 40 60 80 100 0.04 6.0 8.0 10.0 12.0 14.0 16.0 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 120 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA TOP 100 Charge IG ID BOTTOM ID 1.2A 2.2A 2.7A Current Sampling Resistors 80 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 60 40 15 V V (B R )D S S tp VD S L DRIVE R 20 RG 20V 10V D .U .T IA S + - VD D 0 25 50 75 100 125 150 A IAS tp 0.01 Ω Starting TJ , Junction Temperature ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7474 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7474 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 2.7A. „ When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † ISD ≤ 2.7A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9/01 8 www.irf.com