IRF7476

PD - 94311 IRF7476 HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 12V RDS(on) max 8.0mΩ@VGS = 4.5V ID 15A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max. 12 ±12 15 12 120 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 04/29/02 IRF7476 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 12 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.014 6.0 12 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 8.0 VGS = 4.5V, ID = 15A ƒ mΩ 30 VGS = 2.8V, ID = 12A ƒ 1.9 V VDS = VGS, ID = 250µA 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 26 4.6 11 17 11 29 19 8.3 2550 2190 450 Max. Units Conditions ––– S VDS = 6.0V, ID = 12A 40 I D = 12A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 5.0V ––– VDD = 6.0V ––– ID = 12A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 6.0V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 160 12 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.87 0.73 55 59 54 60 2.5 A 120 1.2 ––– 82 89 81 90 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V ƒ TJ = 125°C, IS = 12A, VGS = 0V ƒ TJ = 25°C, IF = 12A, VR=12V di/dt = 100A/µs ƒ TJ = 125°C, IF = 12A, VR=12V di/dt = 100A/µs ƒ 2 www.irf.com IRF7476 1000 TOP VGS ID , Drain-to-Source Current (A) 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V 1000 TOP VGS 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V ID , Drain-to-Source Current (A) 100 100 10 10 1 1 0.1 1.5V 1.5V 0.01 0.1 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 0.01 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.0 I D = 15A  ID , Drain-to-Source Current (Α ) 100.00 1.5 10.00 (Normalized) T J = 150°C R DS(on) , Drain-to-Source On Resistance 1.0 1.00 T J = 25°C VDS = 10V 20µs PULSE WIDTH 0.5 0.10 1.5 2.0 2.5 3.0 3.5 4.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 4.5V  100 120 140 160 VGS, Gate-to-Source Voltage (V) Tj, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7476 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd 6 I D = 12A  5  V DS = 9.6V V DS = 6V V DS = 2.4V C, Capacitance(pF) VGS, Gate-to-Source Voltage (V) 10000 4 C iss C oss 1000 3 2 C rss 100 1 10 100 1 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID , Drain-to-Source Current (A) 100 100µsec 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0 1 10 100 VDS , Drain-to-Source Voltage (V) I SD, Reverse Drain Current (A) 10 TJ = 150  °C TJ = 25 ° C  1 0.1 0.2 0.4 0.6 0.8 1.0 V GS = 0 V  1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7476 15 VDS 12 RD VGS RG D.U.T. + -VDD ID , Drain Current (A) 9 4.5V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 ° Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 10 0.20 0.10 Thermal Response 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1  Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJA  P DM t1 t2 +T A 100 10 1000 t 1, Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7476 R DS (on) , Drain-to-Source On Resistance (m Ω ) 7.5 R DS(on) , Drain-to -Source On Resistance (m Ω ) 15.00 13.00 7.3 7.0 VGS = 4.5V 11.00 9.00 6.8 7.00 ID = 15A 6.5 0 20 40 60 80 100 120 ID , Drain Current (A) 5.00 2.0 4.0 6.0 8.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 400 VG VGS 3mA Charge IG ID Current Sampling Resistors 300  ID TOP 5.4A 9.6A 12A BOTTOM Fig 13a&b. Basic Gate Charge Test Circuit and Waveform EAS , Single Pulse Avalanche Energy (mJ) A 200 15 V 100 V (B R )D S S tp VD S L DRIVE R RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 Starting Tj, Junction Temperature (°C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7476 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER 7 INTERNAT IONAL RECTIFIER LOGO www.irf.com YWW XXXX F7101 IRF7476 SO-8 Tape and Reel T ER M INA L NU M BE R 1 12.3 ( . 484 ) 11.7 ( . 461 ) 8.1 ( . 318 ) 7.9 ( . 312 ) FEE D D IR EC TIO N N OT E S : 1 . CO NT RO L L ING DIM E N S ION : M IL L IM E T E R. 2 . A L L D IM E N S ION S A R E S H O W N IN M IL L IM E T E R S (IN CHES ). 3 . OU TL IN E C O N F O RM S T O E IA -4 81 & E IA -5 4 1. 3 30.00 ( 12 .9 92 ) M A X. 14.40 ( . 566 ) 12.40 ( . 488 ) N O TE S : 1. CO N T RO LL ING D IME N SIO N : MIL LIM ET ER . 2. O UT LIN E C ON F O RM S TO EIA-481 & E IA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.3mH RG = 25Ω, IAS = 12A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02 8 www.irf.com