IRF7477

PD- 94094A SMPS MOSFET IRF7477 HEXFET® Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits VDSS 30V RDS(on) max (mΩ) 8.5@VGS = 10V 10@VGS = 4.5V ID 14A 11A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 20 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 6/26/01 IRF7477 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.029 6.5 7.7 ––– ––– ––– ––– ––– Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 8.5 VGS = 10V, ID = 14A ƒ mΩ 10 VGS = 4.5V, ID = 11A ƒ 2.5 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 25 6.5 8.2 30 12 9.8 19 5.9 2710 1120 100 Max. Units Conditions ––– S VDS = 15V, ID = 11A 38 ID = 11A ––– nC VDS = 15V ––– VGS = 4.5V ––– VGS = 0V, VDS = 15V ––– VDD = 15V ––– ID = 11A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 500 8.2 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– 2.3 A 110 1.3 ––– 140 200 140 210 V ns nC ns nC VSD trr Qrr trr Qrr ––– 0.80 ––– 0.65 ––– 91 ––– 130 ––– 90 ––– 140 2 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V ƒ TJ = 125°C, I S = 11A, VGS = 0V ƒ TJ = 25°C, I F = 11A, VR=15V di/dt = 100A/µs ƒ TJ = 125°C, IF = 11A, VR=15V di/dt = 100A/µs ƒ www.irf.com IRF7477 1000 VGS 10V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 10V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 2.7V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 14A I D , Drain-to-Source Current (A) 1.5 TJ = 25 ° C TJ = 150 ° C 100 1.0 0.5 10 2.5 V DS = 50V 20µs PULSE WIDTH 3.0 3.5 4.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7477 100000 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 11A VGS , Gate-to-Source Voltage (V) VDS = 24V VDS = 15V 10 10000 C, Capacitance(pF) 8 Ciss 1000 Coss 6 Crss 100 4 2 10 1 10 100 0 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100 TJ = 150 ° C 10 ID, Drain-to-Source Current (A) 100 100µsec 10 1msec Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 TJ = 25 ° C 1 10msec 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1 VSD ,Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7477 15 VDS 12 RD VGS RG D.U.T. + I D , Drain Current (A) -VDD 9 10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7477 R DS (on) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.009 0.012 0.008 VGS = 4.5V 0.007 0.010 ID = 14A VGS = 10V 0.006 0.008 0.005 0 20 40 60 80 100 120 ID , Drain Current (A) 0.006 3.0 3.4 3.8 4.2 4.6 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 1200 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA TOP BOTTOM Charge IG ID 1000 ID 3.7A 6.6A 8.2A Current Sampling Resistors 800 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 600 400 15 V V (B R )D S S tp VD S L DRIVE R 200 RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 A Starting TJ , Junction Temperature ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7477 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7477 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board ‚ Starting TJ = 25°C, L = 15mH RG = 25Ω, IAS = 8.2A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01 8 www.irf.com