IRF7478PBF

PD- 95280 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7478PbF HEXFET® Power MOSFET VDSS 60V RDS(on) max (mW) 26@VGS = 10V 30@VGS = 4.5V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 7.0 5.6 56 2.5 0.02 ± 20 3.7 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 09/21/04 IRF7478PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 ––– ––– ––– 1.0 ––– ––– ––– ––– Typ. ––– 0.065 20 23 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 26 VGS = 10V, ID = 4.2A ƒ mΩ 30 VGS = 4.5V, ID = 3.5A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 48V, VGS = 0V µA 100 VDS = 48V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 4.3 9.6 7.7 2.6 44 13 1740 300 37 1590 220 410 Max. Units Conditions ––– S VDS = 50V, ID = 4.2A 31 ID = 4.2A ––– nC VDS = 48V ––– VGS = 4.5V ––– VDD = 30V ––– ID = 4.2A ns ––– RG = 6.2Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 48V … Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 140 4.2 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 52 100 2.3 A 56 1.3 78 150 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 4.2A, VGS = 0V TJ = 25°C, I F = 4.2A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7478PbF 100 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 10 10 2.7V 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.0A ID, Drain-to-Source Current (Α ) 2.0 1.5 10 T J = 25°C 1.0 0.5 1 2.5 3.0 VDS = 25V 20µs PULSE WIDTH 3.5 4.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7478PbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 10 ID = 4.2A VDS = 48V VDS = 30V VDS = 12V VGS , Gate-to-Source Voltage (V) 8 10000 C, Capacitance(pF) Ciss 1000 6 Coss 100 4 Crss 2 10 1 10 100 0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) TJ = 150 ° C 100 10us 10 100us 1ms 1 10ms 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 0.1 1 TA = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7478PbF 8.0 VDS VGS 6.0 RD ID , Drain Current (A) RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD 4.0 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7478PbF RDS(on) , Drain-to -Source On Resistance ( Ω ) RDS (on) , Drain-to-Source On Resistance ( Ω) 0.028 0.026 0.024 0.022 0.020 0.018 VGS = 10V 0.016 0 10 20 30 40 50 60 ID , Drain Current (A) 0.04 VGS = 4.5V 0.03 0.02 ID = 7.0A 0.01 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 400 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP BOTTOM 300 Charge IG ID ID 1.9A 3.4A 4.2A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 200 15V 100 V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01Ω Starting TJ , Junction Temperature ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7478PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7478PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. RG = 25Ω, IAS = 4.2A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time † ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 16mH Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com