IRF7488

PD - 94507 IRF7488 HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 80 ± 20 6.3 5.0 50 2.5 1.6 20 -55 to + 150 300 (1.6mm from case ) Units V A W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 9 www.irf.com 1 9/23/02 IRF7488 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.089 24 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 29 mΩ VGS = 10V, ID = 3.8A ƒ 4.0 V VDS = VGS, ID = 250µA 20 VDS = 80V, VGS = 0V µA 250 VDS = 64V, VGS = 0V, TJ = 125°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 9.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 38 9.1 12 13 12 44 16 1680 270 32 1760 170 340 Max. Units Conditions ––– S VDS = 15V, ID = 3.8A 57 ID = 3.8A nC VDS = 40V VGS = 10V, ––– VDD = 40V ––– ID = 3.8A ns ––– RG = 9.1Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 64V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current  Typ. ––– ––– Max. 96 3.8 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 65 190 2.3 A 50 1.3 98 290 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 3.8A, VGS = 0V TJ = 25°C, IF = 3.8A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7488 100 TOP VGS 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 1 15V 12V 10V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V 10 VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP 0.1 4.0V 1 4.0V 0.01 0.001 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 100 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.5 RDS(on) , Drain-to-Source On Resistance ID = 6.3A VGS = 10V 2.0 ID, Drain-to-Source Current (Α) T J = 150°C 10.00 (Normalized) 1.00 1.5 T J = 25°C 0.10 1.0 0.01 4.0 5.0 VDS = 25V 20µs PULSE WIDTH 6.0 7.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7488 100000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, Cds SHORTED gs Crss = C gd Coss = Cds + Cgd ID= 3.8A 16 10000 VDS= 64V VDS= 40V VDS= 16V C, Capacitance (pF) 12 Ciss 1000 Coss Crss 100 8 4 0 10 1 10 100 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10msec 1.0 T J = 25°C VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7488 7 6 VDS VGS RD ID , Drain Current (A) 5 4 RG 10V D.U.T. + -V DD 3 2 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1 VDS 0 25 50 75 100 125 150 T C , Case Temperature (°C) 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response ( Z thJC ) 10 0.20 0.10 0.05 0.02 0.01 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7488 RDS ( on) , Drain-to-Source On Resistance ( Ω) RDS(on) , Drain-to -Source On Resistance ( Ω) 0.036 0.034 0.032 0.030 0.028 0.026 0.024 0.022 0 20 40 60 80 0.05 0.04 VGS= 10V 0.03 ID = 3.8A 0.02 4.0 8.0 12.0 16.0 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 240 VGS 3mA EAS, Single Pulse Avalanche Energy (mJ) VG Charge IG ID 200 Current Sampling Resistors ID 1.7A 3.0A BOTTOM 3.8A TOP 160 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 120 80 15V 40 V(BR)DSS tp VDS L DRIVER 0 RG 20V D.U.T IAS + V - DD 25 A 50 75 100 125 150 I AS tp 0.01Ω Starting TJ , Junction Temperature (°C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7488 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform www.irf.com 7 IRF7488 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 8 www.irf.com IRF7488 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = 3.8A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.9/02 www.irf.com 9