IRF7492

PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 200 ± 20 3.7 3.0 30 2.5 0.02 9.5 -55 to + 150 300 (1.6mm from case ) Units V V A W W/°C V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 06/27/02 IRF7492 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage BV(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 2.5 ––– ––– ––– ––– Typ. ––– 0.20 64 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 79 mΩ VGS = 10V, ID = 2.2A ƒ ––– V VDS = VGS, ID = 250µA 1.0 VDS = 160V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 39 9.2 15 15 13 27 14 1820 190 94 780 89 150 Max. Units Conditions ––– S VDS = 50V, ID = 3.7A 59 ID = 2.2A ––– nC VDS = 100V ––– VGS = 10V ––– VDD = 100V ––– ID = 2.2A ns ––– RG = 6.5Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 130 4.4 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 69 200 2.3 A 30 1.3 100 310 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, IF = 2.2A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7492 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 100 TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V ID , Drain-to-Source Current (A) 10 ID , Drain-to-Source Current (A) 10 BOTTOM 1 BOTTOM 5.5V 1 0.1 5.5V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 1000 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 3.0 I D = 3.7A  RDS(on), Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current (Α ) 2.5 T J = 150°C 10.00 2.0 T J = 25°C 1.00 1.5 1.0 0.10 4.0 5.0 VDS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V  100 120 140 160 VGS, Gate-to-Source Voltage (V) Tj, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7492 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = C + C ds gd 12 VGS, Gate-to-Source Voltage (V) ID= 2.2A 10 8 6 4 2 0 VDS= 160V VDS= 100V VDS= 40V 10000 C, Capacitance(pF) C iss 1000 100 C oss C rss 10 1 10 100 1000 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) I SD, Reverse Drain Current (A) 10 10 100µsec  TJ = 150 ° C 1  TJ = 25 ° C 1 1msec Tc = 25°C Tj = 150°C Single Pulse 1 10 100 0.1 0.2 0.4 0.6 V GS = 0 V  0.8 1.0 10msec 1000 0.1 V SD,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7492 4.0 VDS VGS 3.0 RD D.U.T. + RG -VDD ID , Drain Current (A) 10V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 (Z thJA ) D = 0.50 10 0.20 0.10 Thermal Response 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1  Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJA  P DM t1 t2 +T A 100 10 1000 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7492 R DS (on) , Drain-to-Source On Resistance (m Ω ) 100 R DS(on) , Drain-to -Source On Resistance (m Ω ) 500 90 400 80 VGS = 10V 70 300 200 60 ID = 3.7A 100 50 40 0 5 10 15 20 25 30 ID , Drain Current (A) 0 5 6 7 8 9 10 11 12 13 14 15 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 300 VG VGS 3mA Charge IG ID 250 Current Sampling Resistors  TOP ID 2.0A 3.5A 4.4A BOTTOM E AS , Single Pulse Avalanche Energy (mJ) 200 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 150 100 15 V V (B R )D S S tp VD S L DRIVE R 50 RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 A Starting Tj, Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7492 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7492 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( . 484 ) 1 1.7 ( . 461 ) 8.1 ( . 318 ) 7.9 ( . 312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 ( 12.992 ) M AX . 14.4 0 ( . 566 ) 12.4 0 ( . 488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ When mounted on 1 inch square copper board. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/02 8 www.irf.com