IRF7495

PD - 94683B IRF7495 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 22m @VGS = 10V : ID 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 100 ± 20 7.3 4.6 58 2.5 0.02 7.3 -55 to + 150 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W e ––– ––– Notes  through † are on page 8 www.irf.com 1 09/23/03 IRF7495 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.10 18 ––– ––– ––– ––– ––– ––– ––– 22 4.0 20 250 200 -200 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 4.4A V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 34 6.3 11.7 8.7 13 10 36 1530 250 110 980 160 240 ––– 51 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC S ID = 4.4A VDS = 50V VGS = 10V VDD = 50V ID = 4.4A RG = 6.2Ω VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 4.4A f f ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V g Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– Max. 180 4.4 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 42 73 2.3 A 58 1.3 ––– ––– V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 4.4A, VGS = 0V TJ = 25°C, IF = 4.4A, VDD = 25V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7495 100 TOP VGS 15V 10V 8.0V 5.0V 4.5V 100 TOP VGS 15V 10V 8.0V 5.0V 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM 4.5V BOTTOM 4.5V 10 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) T J = 150°C 10 ID = 7.3A VGS = 10V 2.0 1.5 T J = 25°C 1 1.0 VDS = 50V 20µs PULSE WIDTH 0.1 2 3 4 5 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF7495 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 10000 C oss = C ds + C gd 12.0 ID= 4.4A VGS, Gate-to-Source Voltage (V) 10.0 VDS= 80V VDS= 50V VDS= 20V C, Capacitance(pF) 8.0 6.0 1000 Ciss Coss 4.0 100 Crss 2.0 10 1 10 100 0.0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10.00 TJ = 150°C 1.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 1msec T J = 25°C 0.10 1 T A = 25°C Tj = 150°C Single Pulse 0.1 0 1 10 10msec 100 1000 VGS = 0V 0.01 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7495 8 7 VDS VGS RD ID, Drain Current (A) 6 5 4 3 2 1 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7495 RDS (on) , Drain-to-Source On Resistance (m Ω) 25 RDS(on) , Drain-to -Source On Resistance (m Ω) 50 40 20 VGS = 10V 30 15 20 ID = 4.4A 10 0 10 20 30 40 50 60 70 ID , Drain Current (A) 10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage L DUT 0 VCC VGS QGS VG QG QGD 500 EAS , Single Pulse Avalanche Energy (mJ) 1K Charge 400 ID 2.0A 3.5A BOTTOM 4.4A TOP Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01Ω Starting T J , Junction Temperature (°C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com IRF7495 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 www.irf.com 7 IRF7495 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 19mH RG = 25Ω, IAS = 4.4A. ƒ When mounted on 1 inch square copper board, t ≤ 10 sec. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/03 8 www.irf.com