IRF7700

PD - 93894A IRF7700 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel VDSS -20V RDS(on) max 0.015@VGS = -4.5V 0.024@VGS = -2.5V ID -8.6A -7.3A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 S 8= 7= 6= 5= D S S D 5 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (