IRF7707PBF

PD-96024 IRF7707PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free VDSS -20V RDS(on) max 22mΩ@VGS = -4.5V 33mΩ@VGS = -2.5V ID -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (