IRF7757

PD - 94174 IRF7757 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration VDSS 20V RDS(on) max (mΩ) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 1 2 3 4 1= 2= 3= 4= S1 G1 S2 G2 8= 7= 6= 5= D D D D 8 7 6 5 signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (