IRF7805PBF

PD – 96031A IRF7805PbF HEXFET® Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free S S S G 1 2 3 4 8 7 A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. SO-8 Device Features VDS RDS(on) Qg Qsw Qoss T o p V ie w IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V Max. 30 Units V e Power Dissipation e Power Dissipation c e @ 10V e ± 12 13 10 100 2.5 1.6 0.02 -55 to + 150 W/°C °C W A Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient eg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W www.irf.com 1 01/09/08 IRF7805PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS RDS(on) VGS(th) IDSS h Static Drain-to-Source On-Resistanceh Gate Threshold Voltage h Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units 30 ––– 1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 9.2 ––– ––– ––– ––– ––– ––– 22 3.7 1.4 6.8 8.2 3.0 ––– 16 20 38 16 ––– 11 3.0 70 10 150 100 -100 31 ––– ––– ––– 11.5 3.6 1.7 ––– ––– ––– ––– nC Ω ns V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 100°C VGS = 12V VGS = -12V VGS = 5.0V VDS = 16V ID = 7.0A d IGSS Qg Qgs1 Qgs2 Qgd Qsw Qoss RG td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge h nA Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge nC h h VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 7.0A RG= 2Ω Resistive Load Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time e Diode Characteristics Parameter IS ISM VSD Qrr Qrr(s) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– 88 55 2.5 106 1.2 ––– ––– A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.0A, VGS = 0V di/dt = 700A/µs VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Ù h f ––– ––– ––– V nC nC Reverse Recovery Charge (with Parallel Schottky) f Notes:  ‚ ƒ „ … † Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Rθ is measured at TJ of approximately 90°C. Devices are 100% tested to these parameters. 2 www.irf.com Typical Characteristics IRF7805PbF Fig 1. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage 10 ISD , Reverse Drain Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 Fig 4. Typical Source-Drain Diode Forward Voltage Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 10 1 0.1 0.001 t1 , Rectangular Pulse Duration (sec) www.irf.com Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 IRF7805PbF SO-8 Package Details 9 6 ' & % $ 7 9DH 6 6 i p 9 @ r r C F G ’ % @ $ C !$Ãb dà 6 ! " # %Y r DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ à Ã'ƒ HDGGDH@U@ST HDI H6Y "$ &$   !$ "" $  ( !$ #' $ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ $ # !& Ã'ƒ à r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ APPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@Ã8P9@Ã`XX QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 www.irf.com IRF7805PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2008 www.irf.com 5