IRF7811A

PD - 93810 PD - 93811 IRF7809A/IRF7811A IRF7809A/IRF7811A PROVISIONAL DATASHEET • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications HEXFET® Chipset for DC-DC Converters S S S G 1 8 7 A A D D D D 2 Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809A offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 mΩ 73 nC 22.5 nC 30 nC IRF7811A 28V 12 mΩ 23 nC 7 nC 31 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 50 25 Units °C/W °C/W TJ, TSTG IS ISM 2.5 50 TA = 25°C TL = 90°C IDM PD Symbol VDS VGS ID 14.5 14.2 100 2.5 2.4 –55 to 150 2.5 50 °C A IRF7809A 30 ±12 11.4 11.2 100 W A IRF7811A 28 Units V www.irf.com 1 01/19/00 IRF7809A/IRF7811A Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Gate Threshold Voltage* Drain-Source Leakage Current* BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td (off) tf Ciss Coss – – – 61 55 14 3.5 13.5 17 25 1.1 19 9 32 12 7300 900 350 – – – – – – 22.5 30 ±100 75 73 19 17 2.7 1.3 4.5 5.8 26 1.8 8 4 16 8 1800 900 60 – – – pF VDS = 16V, VGS = 0 ns 7.0 31 Ω VDD = 16V, ID = 15A VGS = 5V Clamped Inductive Load VDS = 16V, VGS = 0 nC 30 IRF7809A Min Typ – 7 Max – 8.5 28 IRF7811A Min Typ – 10 1.0 30 150 ±100 23 20.5 nA Max Units – 12 V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, I D = 15A‚ VDS = VGS,ID = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS=5V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV VDS = 16V, ID = 15A Current* Gate-Source Leakage Current* Total Gate Chg Cont FET* Total Gate Chg Sync FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd)* Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge„ Reverse Recovery Charge (with Parallel Schottky)„  ‚ ƒ „ * Min VSD Qrr Qrr(s) Typ Max 1.0 Min Typ Max Units 1.0 V nC Conditions IS = 15A‚, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A 94 82 87 74 di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Devices are 100% tested to these parameters. 2 www.irf.com IRF7809A/IRF7811A SO-8 Package Outline Part Marking Information www.irf.com 3 IRF7809A/IRF7811A SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630 IR TAIWAN : 16F, Suite B, 319, Sec.2, Tun Hwa South Road, Taipei 10673, Taiwan, R.O.C. Tel : 886-2-2739-4230 http://www.irf.com/ Data and specifications subject to change without notice. 1/00 4 www.irf.com