IRF7811AV_05

PD-94009B IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. S S S G 1 8 7 A A D D D D 2 3 6 4 5 SO-8 Top View DEVICE CHARACTERISTICS… IRF7811AV 11 mΩ 17 nC 6.7 nC 8.1 nC RDS(on) QG QSW QOSS Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS ≥ 4.5V) Pulsed Drain Current TA = 25°C TL = 90°C = 25°C Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRF7811AV 30 ±20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 Units V A ™ T Power Dissipation eÃÃÃÃÃÃÃÃÃà T Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current A L = 90°C W °C A ™ Thermal Resistance eh Maximum Junction-to-Lead hà Maximum Junction-to-Ambient Parameter Symbol RθJA RθJL Typ ––– ––– Max 50 20 Units °C/W www.irf.com 1 11/01/05 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Min V(BR)DSS 30 RDS(on) VGS(th) IDSS IGSS Qg Qg Qgs1 Qgs2 Qgd QSW QOSS RG td(on) tr td(off) tf Ciss Coss Crss ––– 1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.5 ––– ––– ––– ––– ––– ––– ––– Typ ––– 11 ––– ––– ––– ––– 17 14 3.4 1.6 5.1 6.7 8.1 ––– 8.6 21 43 10 723 46 Max Units Conditions ––– V VGS = 0V, ID = 250µA 14 3.0 50 20 100 26 21 ––– ––– ––– ––– 12 4.4 ––– ––– ––– ––– pF ––– ––– Ω ns VDD = 16V ID = 15A VGS = 5.0V Clamped Inductive Load VGS = 0V VDS = 10V VDS = 16V, VGS = 0 VDS = 16V, ID = 15A mΩ VGS = 4.5V, ID = 15A V µA µA µA nA nC VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 100°C VGS = ± 20V VDS = 24V, ID = 15A, VGS = 5.0V VGS = 5.0V, VDS < 100mV d VDS = VGS, ID = 250µA ––– ±100 1801 ––– Diode Characteristics Parameter Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottsky) Symbol Min VSD ––– Qrr Qrr ––– ––– Typ ––– 50 43 Max Units 1.3 ––– ––– V nC nC Conditions TJ = 25°C, IS = 15A ,VGS = 0V d f di/dt = 700A/µs VDD = 16V, VGS = 0V, ID = 15A di/dt = 700A/µs , (with 10BQ040) VDD = 16V, VGS = 0V, ID = 15A f Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%. ƒ When mounted on 1 inch square copper board, t < 10 sec. „ Typ = measured - Qoss … Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A. † Rθ is measured at TJ approximately 90°C 2 www.irf.com IRF7811AV RDS(on) , Drain-to-Source On Resistance 2.0 I D = 15A 6 1.5 VGS , Gate-to-Source Voltage (V) V GS = 4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 ID = 15A VDS = 16V (Normalized) 4 1.0 2 0.5 0.0 0 0 5 10 15 20 T J , Junction Temperature ( ° C) Q G, Total Gate Charge (nC) Figure 1. Normalized On-Resistance vs. Temperature RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.020 Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge 3000 V GS = 0V, f = 1 MHZ Ciss = C gs + C gd , Cds SHORTED Crss = C gd Coss = C ds + C gd I D = 15A 0.018 2500 C, Capacitance(pF) 0.016 2000 Ciss Coss 0.014 1500 0.012 1000 0.010 500 Crss 0.008 3.0 6.0 9.0 12.0 15.0 0 1 10 100 V GS, Gate -to -Source Voltage (V) V DS , Drain-to-Source Voltage (V) Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 Figure 4. Typical Capacitance vs. Drain-to-Source Voltage 100 I D , Drain-to-Source Current (A) T = 150 ° C J 10 ISD , Reverse Drain Current (A) T = 150 ° C J 10 T = 25 ° C J T = 25 ° C J 1 1 0.1 V DS = 15V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 V GS= 0 V 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage (V) V SD ,Source-to-Drain Voltage (V) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7811AV 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 PDM t1 t2 10 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 50 u 8V 5 uH Schottky -6A VDD 450 125nS Repetition rate:100Hz 50 u 16Vz500mW Mic4452BM 450 50 Ohms probe V ds 90% 10% Vgs t d(on) t f(v) t d(off) t r (v) Switching Time Waveforms Figure 8. Clamped Inductive load test diagram and switching waveform 4 www.irf.com IRF7811AV SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 5 IRF7811AV SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES: 1 . CONTROLLING DIMENSION : MILLIMETER. 2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3 . OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/05 6 www.irf.com