IRF7822

PD - 94279 IRF7822 HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S G 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS U IRF7822 RDS(on) QG Qsw Qoss 5.0mΩ 44nC 12nC 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain CurrentQ Power Dissipation TA = 25°C TA = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source CurrentQ Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TA = 70°C IDM PD Symbol VDS VGS ID IRF7822 30 ±12 18 13 150 3.1 3.0 –55 to 150 3.8 150 °C A W A Units V www.irf.com 1 07/11/01 IRF7822 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss – – – (off) Min 30 Typ – 5.0 Max – 6.5 Units V mΩ V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 15AR VDS = VGS,I D = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS=5.0V, ID=15A, VDS =16V VGS = 5.0V, VDS< 100mV VDS = 16V, ID = 15A Current* µA nA Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance ±100 44 38 13 3.0 9.0 12 27 1.5 15 5.5 22 12 5500 1000 300 – – – 60 nC VDS = 16V, VGS = 0 Ω VDD = 16V, I D = 15A ns VGS = 5.0V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery ChargeT Reverse Recovery Charge (with Parallel Schottky) T VSD Qrr Qrr(s) 120 Min Typ Max 1.0 Units V nC Conditions IS = 15AR, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A 108 nC di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width ≤ 400 µs; duty cycle ≤ 2%. S When mounted on 1 inch square copper board T Typ = measured - Qoss UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. 2 www.irf.com IRF7822 2.0 ID = 15A  6 ID = 15A  R DS(on) , Drain-to-Source On Resistance (Normalized)  VDS = 24V 5 1.5 VGS, Gate-to-Source Voltage (V) 4 1.0 2 0.5 1 0.0 -60 -40 -20 V GS = 4.5V  0 20 40 60 80 100 120 140 160 0 0 10 20 30 40 50 TJ , Junction Temperature ( °C) QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.010 0.009 0.008 0.007 0.006 0.005 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + C ds gd C, Capacitance(pF) 10000 ID = 15A Ciss 1000 Coss Crss 0.004 0.003 3.0 4.0 5.0 6.0 7.0 100 1 10 100 VGS, Gate -to -Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3 IRF7822 100.00 100 ID, Drain-to-Source Current (Α ) ISD , Reverse Drain Current (A) T J = 175°C 10 TJ = 150 ° C  10.00 T J = 25°C TJ = 25 ° C  1 1.00 1.0 2.0 VDS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 0.1 0.2 0.5 0.7 V GS = 0 V  1.0 1.2 VGS, Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 D = 0.50 (Z thJA) 10 0.20 0.10 0.05 Thermal Response 1 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = 2. Peak T t1 / t 2 J = P DM x Z thJA  P DM t1 t2 +T A 10 100 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7822 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 45 ° .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0° .2 440 .019 .050 8° 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0° 6.20 0 .48 1.27 8° -CB 8X 0 .25 (.01 0) A1 M CASBS L θ R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 5 IRF7822 SO-8 Tape and Reel T E R M INA L NU M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 92 ) M AX . 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R. 2 . OU T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/01 6 www.irf.com