IRF7835UPBF

PD - 96080A IRF7835UPbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Qrr l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free VDSS 30V 4.5m:@VGS = 10V 1 2 3 4 8 7 RDS(on) max Qg 22nC S S S G A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ± 20 19 15 150 2.5 1.6 0.02 -55 to + 155 Units V c A W W/°C °C Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 09/19/06 1 IRF7835UPbF BVDSS ∆Β VDSS/∆T J RDS(on) V GS(th) ∆V GS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage B reakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 81 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.023 3.6 4.5 1.8 -6.0 ––– ––– ––– ––– ––– 22 5.5 2.1 7.2 7.2 9.3 14 1.0 9.6 13 14 4.6 2960 610 270 ––– ––– 4.5 5.7 2.35 ––– 1.0 150 100 -100 ––– 33 ––– ––– ––– ––– ––– ––– 1.7 ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC Ω nC VDS = 15V VGS = 4.5V ID = 15A S nA V mV/°C µA V mΩ Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 19A VGS = 4.5V, ID V/°C Reference to 25°C, ID = 1mA e = 15A e VDS = VGS, ID = 50µA VDS = 24V, V GS = 0V VDS = 24V, V GS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 15A See Fig. 16 VDS = 16V, V GS = 0V VDD = 15V, V GS = 4.5V ID = 15A Clamped Inductive Load ƒ = 1.0MHz Avalanche Characteristics E AS IAR Parameter Single Pulse Avalanche Energy Avalanche Current ™ d Typ. ––– ––– Max. 240 15 Units mJ A Diode Characteristics Parameter IS ISM V SD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 16 21 3.1 A 150 1.0 24 32 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 15A, VGS = 0V di/dt = 320A/µs e TJ = 25°C, IF = 15A, V DD = 15V e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7835UPbF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 10 0.1 2.3V 0.01 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 1 10 100 0.1 2.3V 1 ≤ 60µs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 100 TJ = 150°C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 15A VGS = 10V 1.5 1 TJ = 25°C 1.0 0.1 VDS = 15V ≤ 60µs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7835UPbF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 10 8 6 4 2 0 ID= 15A VDS= 25V VDS= 16V VDS= 7.6V C, Capacitance (pF) 10000 Ciss 1000 Coss Crss 100 1 10 100 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec 100µsec 100 100 TJ = 150°C 10 10 10msec 1 1 TJ = 25°C VGS = 0V 0.1 TA = 25°C Tj = 150°C Single Pulse 0.1 1 100msec 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.01 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7835UPbF 20 2.2 VGS(th) Gate threshold Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 16 ID , Drain Current (A) 12 ID = 50µA 8 4 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TC, CaseTemperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature 100 D = 0.50 10 Thermal Response ( ZthJA ) 1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τC τ1 τ2 τ3 τ3 τ 0.1 Ri (°C/W) τι (sec) 0.01 Ci= τ i/Ri Ci= τi/Ri 5.599447 0.010553 27.35936 1.1984 17.0458 44.7 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.01 0.1 1 10 100 0.0001 1E-006 1E-005 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7835UPbF ( RDS (on), Drain-to -Source On Resistance mΩ) 16 ID = 15A 12 EAS, Single Pulse Avalanche Energy (mJ) 500 400 ID 1.4A 1.8A BOTTOM 15A TOP 300 8 TJ = 125°C 200 4 TJ = 25°C 0 2.0 4.0 6.0 8.0 10.0 100 0 25 50 75 100 125 150 VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit LD VDS Fig 14b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 6 www.irf.com IRF7835UPbF Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF7835UPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] F OOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking 8 www.irf.com IRF7835UPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.1mH, RG = 25Ω, IAS = 15A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. … Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2006 www.irf.com 9