0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
电子发烧友
开通电子发烧友VIP会员 尊享10大特权
海量资料免费下载
精品直播免费看
优质内容免费畅学
课程9折专享价
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRF7836PBF

IRF7836PBF

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IRF7836PBF - HEXFET Power MOSFET - International Rectifier

  • 数据手册
  • 价格&库存
IRF7836PBF 数据手册
PD - 97171 IRF7836PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max Qg 5.7m:@VGS = 10V 18nC A A D D D D S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 17 13 130 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f Power Dissipation c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 01/05/06 IRF7836PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 70 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.024 4.5 5.7 1.8 -6.2 ––– ––– ––– ––– ––– 18 4.1 1.5 5.8 6.6 7.3 11 1.0 8.9 11 12 4.2 2400 500 230 ––– ––– 5.7 7.1 2.35 ––– 1.0 150 100 -100 ––– 27 ––– ––– ––– ––– ––– ––– 1.7 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF ns nC Ω nC VDS = 15V VGS = 4.5V ID = 13A S nA V mV/°C µA V mΩ Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 17A VGS = 4.5V, ID = 13A V/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 50µA VDS = 24V, VGS = 0V e e VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 13A See Fig. 17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 13A Clamped Inductive Load See Fig. 15 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 130 13 Units mJ A Avalanche Characteristics EAS IAR ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 15 17 3.1 130 1.0 23 26 A A V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V TJ = 25°C, IF = 13A, VDD = 15V See Fig. 16 di/dt = 500A/µs e eà Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7836PbF 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 10 2.3V 1 1 0.1 2.3V 0.01 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 0.1 100 1000 0.1 1 ≤60µs PULSE WIDTH Tj = 150°C 10 100 1000 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 17A VGS = 10V 100 1.5 10 T J = 150°C 1 T J = 25°C 1.0 VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF7836PbF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 5.0 ID= 13A 4.0 VDS= 24V VDS= 15V VDS= 6.0V C, Capacitance (pF) 10000 3.0 Ciss 1000 2.0 Coss Crss 1.0 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 2 4 6 8 10 12 14 16 18 20 22 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 T J = 150°C 10 T J = 25°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1msec 1 10msec 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 0.1 T A = 25°C Tj = 150°C Single Pulse 0 1 10 100 0.01 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7836PbF 18 VGS(th) , Gate Threshold Voltage (V) 2.5 16 14 ID, Drain Current (A) 2.0 12 10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 1.5 ID = 50µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 100 10 Thermal Response ( Z thJA ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 Ri (°C/W) τA τA τi (sec) 0.00553 1.1417 46.1 5.745666 27.28631 16.97549 0.1 τ1 τ2 τ3 Ci= τi/ Ri Ci= τi/ Ri 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7836PbF RDS(on), Drain-to -Source On Resistance (m Ω) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 T J = 25°C T J = 125°C 500 EAS , Single Pulse Avalanche Energy (mJ) ID = 17A 400 ID TOP 1.0A 1.3A BOTTOM 13A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current LD 15V VDS VDS L DRIVER VDD D.U.T RG VGS 20V D.U.T IAS tp + V - DD VGS A 0.01Ω Pulse Width < 1µs Duty Factor < 0.1% Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tf td(off) tr Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 6 www.irf.com IRF7836PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform www.irf.com 7 IRF7836PbF SO-8 Package Outline (Dimensions are shown in millimeters (inches) 9 6 ' & % $ 7 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # (' !  " &$ ('  (%'  '(  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (% $  % Ã'ƒ à HDGGDH@U@ST HDI H6Y &$ "$ !$   $ ""  ( !$ $ #' # "' !&ÃÃ76TD8 %"$ÃÃ76TD8 %! $' $ !$ !& # à Ã'ƒ % @ $ C !$Ãb dà 6 ! " # %Y r r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ APPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking (;$03/( 7+,6 ,6 $1 ,5) 026)(7 '$7( &2'(
IRF7836PBF 价格&库存

很抱歉,暂时无法提供与“IRF7836PBF”相匹配的价格&库存,您可以联系我们找货

免费人工找货