IRF7853PBF

PD - 97069 IRF7853PbF HEXFET® Power MOSFET Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings l Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 100 ± 20 8.3 6.6 66 2.5 0.02 5.1 -55 to + 150 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei ––– ––– Notes  through ‡ are on page 8 www.irf.com 1 1/5/06 IRF7853PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– 3.0 ––– ––– ––– ––– ––– 0.11 14.4 ––– ––– ––– ––– ––– ––– ––– 18 4.9 20 250 100 -100 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 8.3A V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 100µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 28 7.8 10 1.4 13 6.6 26 6.0 1640 310 71 1600 180 320 ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns Ω VDD = 50V ID = 5.0A RG = 6.2Ω VGS = 10V VGS = 0V VDS = 25V nC S ID = 5.0A VDS = 50V VGS = 10V Conditions VDS = 25V, ID = 5.0A f f ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Max. 610 5.0 g Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 45 84 2.3 A 66 1.3 68 130 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 5.0A, VGS = 0V TJ = 25°C, IF = 5.0A, VDD = 25V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7853PbF 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) 10 BOTTOM 1 1 4.5V 0.1 0.01 0.01 4.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 1 10 100 ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.5 RDS(on) , Drain-to-Source On Resistance ID = 8.3A 2.0 ID, Drain-to-Source Current(Α) VGS = 10V 10.0 TJ = 150°C (Normalized) 1.5 1.0 TJ = 25°C 1.0 VDS = 25V 0.1 3.0 4.0 5.0 ≤ 60µs PULSE WIDTH 6.0 7.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF7853PbF 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 VGS, Gate-to-Source Voltage (V) ID= 5.0A 16 VDS = 80V VDS= 50V VDS= 20V 10000 C, Capacitance (pF) Ciss 1000 12 Coss Crss 8 100 4 10 1 10 100 0 0 10 20 30 40 50 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100.0 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 10.0 TJ = 150°C 100 100µsec 10 1msec 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 0 1 10 100 1000 1.0 TJ = 25°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7853PbF 10 VDS 8 RD VGS RG ID , Drain Current (A) D.U.T. + 6 -VDD 10V 4 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2 Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 0 TC , CaseTemperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τA C τ τ3 1 τJ Ri (°C/W) τi (sec) 7.016 0.00474 26.95 16.04 0.04705 2.3619 0.1 τ1 τ2 Ci= τi/Ri Ci τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7853PbF m RDS (on), Drain-to -Source On Resistance ( Ω) m RDS (on) , Drain-to-Source On Resistance ( Ω) 40 VGS = 10V 40 ID = 5.0A 35 30 TC = 125°C 30 TJ = 125°C 25 20 TC = 25°C 20 15 TJ = 25°C 10 4 6 8 10 12 14 16 10 0 10 20 30 40 50 60 70 ID , Drain Current (A) VGS, Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage L 0 DUT 1K VCC VGS QGS VG QG QGD 2500 EAS, Single Pulse Avalanche Energy (mJ) Charge 2000 ID 0.23A 0.34A BOTTOM 5.0A TOP Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 1500 1000 15V V(BR)DSS tp VDS L 500 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01Ω Starting TJ, Junction Temperature (°C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com IRF7853PbF SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7853PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 49mH, RG = 25Ω, IAS = 5.0A. ƒ When mounted on 1 inch square copper board, t ≤ 10 sec. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time † ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. ‡ Rθ is measured at TJ of approximately 90°C. as Coss while VDS is rising from 0 to 80% VDSS. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/06 8 www.irf.com