IRF7855PBF

PD - 97173 IRF7855PbF Applications l Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters l Secondary Side Synchronous Rectification Switch for 15Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 60V RDS(on) max 9.4m:@VGS = 10V ID 12A S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Max. 60 ± 20 12 8.7 97 2.5 0.02 9.9 -55 to + 150 Units V A c e W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei ––– ––– Notes  through ‡ are on page 8 www.irf.com 1 01/05/06 IRF7855PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 60 ––– ––– 3.0 ––– ––– ––– ––– ––– 72 7.4 ––– ––– ––– ––– ––– ––– ––– 9.4 4.9 20 250 100 -100 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 12A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V mV/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 100µA f Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 26 6.8 9.6 8.7 13 16 12 1560 440 120 1910 320 520 ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF ns nC S ID = 7.2A VDS = 30V VGS = 10V VDD = 30V ID = 7.2A RG = 6.2Ω VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 7.2A f f ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 48V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 48V Max. 540 7.2 g Avalanche Characteristics EAS IAR Ù d Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 33 38 2.3 A 97 1.3 50 57 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = 7.2A, VGS = 0V TJ = 25°C, IF = 7.2A, VDD = 25V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7855PbF 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) 10 BOTTOM 1 4.5V 1 0.1 4.5V 0.01 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 150°C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 12A VGS = 10V 10 T J = 150°C 1.5 1 T J = 25°C 1.0 VDS = 15V ≤60µs PULSE WIDTH 0.1 3 4 5 6 7 8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF7855PbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 12.0 ID= 7.2A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance (pF) Ciss 1000 Coss VDS= 48V VDS= 30V VDS= 12V Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 10 T J = 150°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1msec T J = 25°C 1 1 0.1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) T A = 25°C Tj = 150°C Single Pulse 0 1 10 10msec 100 1000 0.01 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7855PbF 12 VDS RD 10 ID, Drain Current (A) VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + 8 6 4 2 0 25 50 75 100 125 150 10% VGS -VDD Fig 10a. Switching Time Test Circuit VDS 90% T A , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 10 Thermal Response ( Z thJA ) 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τA τA Ri (°C/W) τi (sec) 6.734 0.027848 27.268 16.003 1.3813 53 τ1 τ2 τ3 Ci= τi/Ri Ci= τi/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7855PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) 16 14 12 10 T J = 25°C 8 6 Vgs = 10V 4 10 20 30 40 50 60 70 80 90 100 ID, Drain Current (A) 30 ID = 7.2A 25 20 15 10 5 0 4 5 6 7 8 9 10 11 12 13 14 15 16 T J = 25°C T J = 125°C T J = 125°C VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage L 0 DUT 1K VCC VGS QGS VG QG QGD 2400 EAS , Single Pulse Avalanche Energy (mJ) Charge 2000 1600 1200 800 400 0 25 50 75 ID 0.41A 0.58A BOTTOM 7.2A TOP Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + V - DD A I AS tp 0.01Ω 100 125 150 Starting T J , Junction Temperature (°C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com IRF7855PbF SO-8 Package Details 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # (' !  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CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 21mH, RG = 25Ω, IAS = 7.2A. ƒ When mounted on 1 inch square copper board, t ≤ 10 sec. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time † ISD ≤ 7.2A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. ‡ Rθ is measured at TJ of approximately 90°C. as Coss while VDS is rising from 0 to 80% VDSS. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/06 8 www.irf.com