IRF7862PBF

PD - 97275 IRF7862PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free VDSS 30V 3.7m:@VGS = 10V A A D D D D RDS(on) max Qg 30nC S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 21 17 170 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 3/1/07 IRF7862PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 87 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.023 3.0 3.7 ––– -5.4 ––– ––– ––– ––– ––– 30 7.5 3.1 9.8 9.6 12.9 18 1.0 12 16 17 6.1 4090 810 390 ––– ––– 3.7 4.5 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 20A VGS = 4.5V, ID = 16A 2.35 V VDS = VGS, ID = 100µA ––– mV/°C VDS = VGS, ID = 250µA 1.0 150 100 -100 ––– 45 ––– ––– ––– ––– ––– ––– 1.6 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– nC Ω µA nA S e e VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 16A VDS = 15V VGS = 4.5V ID = 16A See Figs. 15 & 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V nC ns ID = 16A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 350 16 Units mJ A pF Avalanche Characteristics EAS IAR ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 17 33 3.1 A 170 1.0 26 50 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 16A, VGS = 0V TJ = 25°C, IF = 16A, VDD = 15V di/dt = 430A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF7862PbF 1000 ≤60µs PULSE WIDTH Tj = 25°C 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ≤60µs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) 100 10 BOTTOM 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 10 0.1 2.3V 2.3V 1 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) VDS = 15V ≤60µs PULSE WIDTH ID, Drain-to-Source Current (A) 100 1.4 ID = 21A VGS = 10V 1.2 10 T J = 150°C T J = 25°C 1.0 1 0.8 0.1 1 2 3 4 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF7862PbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 5.0 ID= 16A VGS, Gate-to-Source Voltage (V) 4.0 VDS= 24V VDS= 15V C, Capacitance (pF) 10000 Ciss 3.0 1000 Coss Crss 2.0 1.0 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 1msec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 10msec T J = 150°C 10 T J = 25°C 1 T A = 25°C VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 0.1 Tj = 150°C Single Pulse 1.0 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7862PbF 25 VGS(th) , Gate Threshold Voltage (V) 2.5 2.3 2.0 1.8 1.5 1.3 1.0 20 ID, Drain Current (A) 15 10 ID = 250µA 5 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 D = 0.50 Thermal Response ( Z thJA ) °C/W 10 1 0.1 0.01 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τA τ4 τA Ri (°C/W) 1.242 4.759 28.506 15.507 τi (sec) 0.000172 0.031397 1.2211 44.5 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 τ1 τ2 τ3 τ4 Ci= τ i/ Ri Ci= τ i/ Ri 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7862PbF RDS(on), Drain-to -Source On Resistance (m Ω) 12 ID = 21A 10 1600 EAS , Single Pulse Avalanche Energy (mJ) 1400 1200 1000 800 600 400 200 0 ID TOP 1.0A 1.4A BOTTOM 16A 8 6 T J = 125°C 4 T J = 25°C 2 2 3 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER L 0 VDS L DUT 1K 20K S VCC RG 20V D.U.T IAS tp + - VDD A 0.01Ω I AS Fig 14. Unclamped Inductive Test Circuit and Waveform Id Fig 15. Gate Charge Test Circuit Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 6 www.irf.com IRF7862PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs LD VDS + VDD D.U.T VGS Second Pulse Width < 1µs Duty Factor < 0.1% VGS 90% 10% VDS td(off) tf td(on) tr Fig 19. Switching Time Test Circuit Fig 20. Switching Time Waveforms www.irf.com 7 IRF7862PbF SO-8 Package Outline 9 6 ' & ! % " $ 7 (Dimensions are shown in millimeters (inches) 9DH 6 6 i DI8C@T HDI H6Y $"! %'' #  " &$  '( (' ! ('  (%' HDGGDH@U@ST HDI H6Y "$ &$   ""  ( #' !$ $ !$ $ % @ $ # C !$Ãb dà 6 p 9 @ r r C  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  % à  (% $ Ã'ƒ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ # à $ !& Ã'ƒ %Y r F G ’ r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ APPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking 8 www.irf.com IRF7862PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.7mH, RG = 25Ω, IAS = 16A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. … Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/07 www.irf.com 9