IRF7910

PD - 94419 IRF7910 HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications S1 VDSS 12V RDS(on) max 15mΩ @VGS = 4.5V ID 10A 1 8 D1 D1 D2 D2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current G1 S2 G2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max. 12 ± 12 10 7.9 79 2.0 1.3 16 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 62.5 Units °C/W Notes  through „ are on page 8 www.irf.com 1 4/29/02 IRF7910 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RDS(on) VGS(th) IDSS IGSS Min. 12 ––– ––– ––– 0.6 ––– ––– ––– ––– Typ. ––– 0.01 11.5 20 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 15 VGS = 4.5V, ID = 8.0A ƒ mΩ 50 VGS = 2.8V, I D = 5.0A 2.0 V VDS = VGS, ID = 250µA 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 18 ––– ––– S VDS = 6.0V, ID = 8.0A ––– 17 26 ID = 8.0A ––– 4.4 ––– nC VDS = 6.0V ––– 5.2 ––– VGS = 4.5V ––– 16 ––– VGS = 0V, VDS = 10V ––– 9.4 ––– VDD = 6.0V ––– 22 ––– ID = 8.0A ns ––– 16 ––– RG = 1.8Ω ––– 6.3 ––– VGS = 4.5V ƒ ––– 1730 ––– VGS = 0V ––– 1340 ––– VDS = 6.0V ––– 330 ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 100 8.0 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.85 0.70 50 60 51 60 1.8 A 79 1.3 ––– 75 90 77 90 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V ƒ TJ = 125°C, I S = 8.0A, VGS = 0V ƒ TJ = 25°C, IF = 8.0A, VR =12V di/dt = 100A/µs ƒ TJ = 125°C, IF = 8.0A, V R =12V di/dt = 100A/µs ƒ 2 www.irf.com IRF7910 1000 TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 10 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V VGS 1000 100 VGS 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V TOP 10 1 1.5V 0.1 1 1.5V 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I D = 10A ID, Drain-to-Source Current (Α) R DS(on) , Drain-to-Source On Resistance 1.5 T J = 150°C 10 (Normalized) 1.0 TJ = 25°C 0.5 1 1.0 2.0 VDS = 10V 20µs PULSE WIDTH 3.0 4.0 V GS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7910 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID= 8.0A VGS , Gate-to-Source Voltage (V) 10 8 6 4 2 0 VDS= 9.6V VDS= 6.0V C, Capacitance (pF) 1000 Ciss Coss Crss FOR TEST CIRCUIT SEE FIGURE 13 100 1 10 100 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10.0 T J = 150°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec Tc = 25°C Tj = 150°C Single Pulse 0 1 10 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) 10msec 1 100 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7910 10.0 VDS 8.0 RD VGS RG D.U.T. + ID , Drain Current (A) -V DD 6.0 V GS 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 (Z thJA ) 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7910 RDS (on) , Drain-to-Source On Resistance ( Ω) RDS(on) , Drain-to -Source On Resistance ( Ω) 0.0145 0.020 0.0140 0.018 0.0135 0.015 0.0130 VGS = 4.5V ID = 8.0A 0.013 0.0125 0.0120 0 20 40 60 80 100 ID , Drain Current (A) 0.010 2.5 3.5 4.5 5.5 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 250 VG ID TOP Charge VGS 3mA 200 Current Sampling Resistors EAS , Single Pulse Avalanche Energy (mJ) IG ID BOTTOM 3.6A 6.4A 8.0A Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 150 100 15V V(BR)DSS tp VDS L 50 DRIVER RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01Ω Starting T , Junction Temperature J ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7910 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45° 8X L 7 8X c NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 www.irf.com 7 IRF7910 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t