IRF7Y1405CM

PD - 94449 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number IRF7Y1405CM BVDSS 55V RDS(on) ID 0.0153Ω 18A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 18* 72 100 0.8 ±20 308 18 10 1.8 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 05/31/02 IRF7Y1405CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 — — 2.0 36 — — — — — — — — — — — — Typ Max Units — 0.057 — — — — — — — — — — — — — — 6.8 — — 0.0153 4.0 — 25 250 100 -100 200 40 80 20 90 250 150 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 18A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 18A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V VDD = 28V, ID = 18A, VGS = 10V, RG = 2.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH l Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5080 1300 300 — — — pF Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 18* 72 1.3 100 350 Test Conditions A V ns nC Tj = 25°C, IS = 18A, VGS = 0V ➃ Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.25 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7Y1405CM 1000 VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V TOP 1000 VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 10 10 1 3.7V 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 3.7V 0.1 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 T J = 150°C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 18A  ID, Drain-to-Source Current (Α ) 1.5 10 T J = 25°C 1.0 1 0.5 VDS = 25V 15 20µs PULSE WIDTH 0.1 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7Y1405CM 8000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 6000  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 18A  16 Ciss   VDS = 44V VDS = 27V VDS = 11V 12 4000 C oss 2000 8 C rss 0 1 10 100 4 0 0 60  FOR TEST CIRCUIT SEE FIGURE 13 180 120 240 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 T J = 150°C OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current ( Α ) ID, Drain-to-Source Current (A) 10 T J = 25°C 100µs 10 1ms 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8 Tc = 25°C Tj = 150°C Single Pulse 1 1 10 10ms 100 1000 VSD , Source-to-Drain Voltage ( V ) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7Y1405CM 70  LIMITED BY PACKAGE 60 V DS VGS RG RD D.U.T. + I D , Drain Current (A) 50 -V DD 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7Y1405CM 800 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 600  ID 8.0A 11.4A BOTTOM 18A TOP VD S L D R IV E R RG D .U .T. IA S 400 + V - DD A VGS 20V tp 0 .0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7Y1405CM Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 25 V, Starting TJ = 25°C, L= 1.9 mH Peak IAS = 18A, VGS =10V, RG= 25Ω ƒ ISD ≤ 18A, di/dt ≤ 230 A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3 B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA. P IN AS S IGNME NT S 1 = GAT E 2 = DRAIN 3 = S OURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/02 www.irf.com 7