IRF7YSZ44VCM

PD - 94603 HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) IRF7YSZ44VCM 60V, N-CHANNEL Product Summary Part Number IRF7YSZ44VCM BVDSS 60V RDS(on) ID 0.0195Ω 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Low Ohmic TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 20* 20* 80 50 0.4 ±20 71 20 5.0 1.6 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 02/07/03 IRF7YSZ44VCM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 2.0 17 — — — — — — — — — — — — Typ Max Units — 0.064 — — — — — — — — — — — — — — 6.8 — — 0.0195 4.0 — 25 250 100 -100 50 18 25 20 120 60 90 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 20A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 20A ➃ VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 20A VDS = 48V VDD = 30V, ID = 20A, VGS = 10V, RG = 9.1Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH l Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1730 375 60 — — — pF Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 20* 80 1.2 105 220 Test Conditions A V ns nC Tj = 25°C, IS = 20A, VGS = 0V ➃ Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 2.5 Units °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7YSZ44VCM 1000 ID, Drain-to-Source Current (A) 100 10 4.5V 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100.0 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 150°C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 20A  ID , Drain-to-Source Current ( Α ) 2.0 TJ = 25°C 10 1.5 1.0 VDS = 25V 20 µs 15 PULSE WIDTH 1.0 4 4.5 5 5.5 6 6.5 7 7.5 8 VGS, Gate-to-Source Voltage (V) 0.5 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7YSZ44VCM 3000 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds 12 ID = 20A VDS = 48V VDS = 30V VDS= 12V 8 2000 Ciss 1500 VGS, Gate-to-Source Voltage (V) 100 2500 Crss = C gd Coss = C + C ds gd C, Capacitance (pF) 1000 Coss 4 500 Crss 0 1 10 0 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current ( Α ) T J = 150°C T J = 25°C 10 ID , Drain-to-Source Current (A) 100 10 100µs 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 10ms VGS = 0V 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7YSZ44VCM 40  LIMITED BY PACKAGE 30 V DS VGS RG RD D.U.T. + I D , Drain Current (A) -V DD VGS 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7YSZ44VCM 150 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 120  ID 9.0A 12.6A BOTTOM 20A TOP VDS L D R IV E R 90 RG 2VV 0 GS tp D .U .T. IA S + V - DD A 60 0 .0 1 Ω 30 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7YSZ44VCM Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ VDD = 25 V, Starting TJ = 25°C, L= 0.35mH Peak I AS = 20A, VGS =10V, RG= 25Ω ƒ ISD ≤ 20A, di/dt ≤ 310A/µs, „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 60V, TJ ≤ 150°C Case Outline and Dimensions — Low-ohmic TO-257AA A 10.66 [.420] 10.42 [.410] 3.81 [.150] 3X Ø 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3 B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] Ø 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PE R ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIME TERS [INCHES ]. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA. P IN AS S IGNME NT S 1 = DRAIN 2 = S OURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 www.irf.com 7