IRF8010

PD - 94497 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(on) = 12mΩ IRF8010 HEXFET® Power MOSFET VDSS 100V RDS(on) max 15mΩ ID 80A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10) N•m (lbf•in) Max. 80 57 320 260 1.8 ± 20 16 -55 to + 175 Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.57 ––– 62 Units °C/W Notes through are on page 8 www.irf.com 1 08/23/02 IRF8010 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.11 12 ––– ––– ––– ––– ––– ––– ––– 15 4.0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 45A V µA VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 82 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 81 22 26 15 130 61 120 3830 480 59 3830 280 530 ––– 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC V ID = 80A VDS = 80V VGS = 10V VDD = 50V ID = 80A RG = 39Ω VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 45A ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 310 45 26 Units mJ A mJ Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 99 460 80 A 320 1.3 150 700 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = 80A, VGS = 0V TJ = 150°C, IF = 80A, VDD = 50V di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF8010 10000 TOP VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V 1000 TOP VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V ID, Drain-to-Source Current (A) 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 100 BOTTOM 4.0V 10 10 4.0V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 20µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 I D = 80A ID, Drain-to-Source Current (Α) T J = 175°C RDS(on) , Drain-to-Source On Resistance 3.0 2.5 100 (Normalized) 2.0 10 T J = 25°C 1.5 1.0 VDS = 50V 20µs PULSE WIDTH 1 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF8010 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 12 VGS , Gate-to-Source Voltage (V) ID= 80A VDS= 80V VDS= 50V VDS= 20V 10 8 6 4 2 0 10000 C, Capacitance(pF) Ciss 1000 Coss 100 Crss 10 1 10 100 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C 10 ID, Drain-to-Source Current (A) 1000 I SD , Reverse Drain Current (A) 100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec T J= 25 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 0.1 100 1000 VDS, Drain-to-Source Voltage (V) V SD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF8010 80 VDS LIMITED BY PACKAGE RD VGS 60 D.U.T. + RG -VDD ID , Drain Current (A) 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) Thermal Response 1 D = 0.50 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +T C 1 0.20 0.1 0.10 0.05 0.02 0.01 J = P DM x Z thJC 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF8010 15V 600 TOP VDS L DRIVER 500 BOTTOM ID 18A 32A 45A EAS , Single Pulse Avalanche Energy (mJ) 400 RG 20V D.U.T IAS tp + V - DD A 300 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 100 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF8010 Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF8010 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRF1010 9246 9B 1M Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, IAS = 45A. ISD ≤ 45A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. DATE CODE (YYWW) YY = YEAR WW = WEEK Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02 8 www.irf.com