IRF820APBF

PD - 94978 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l IRF820APbF HEXFET® Power MOSFET VDSS 500V RDS(on) max 3.0Ω ID 2.5A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 2.5 1.6 10 50 0.4 ± 30 3.4 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Two transistor Forward Half Bridge and Full Bridge Notes  through … are on page 8 www.irf.com 1 02/03/04 IRF820APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.60 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.0 Ω VGS = 10V, ID = 1.5A „ 4.5 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 1.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 8.1 12 16 13 340 53 2.7 490 15 28 Max. Units Conditions ––– S VDS = 50V, ID = 1.5A 17 ID = 2.5A 4.3 nC VDS = 400V 8.5 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 250V ––– ID = 2.5A ns ––– RG = 21Ω ––– RD = 97Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 140 2.5 5.0 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– Max. 2.5 ––– 62 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol ––– ––– 2.5 showing the A G integral reverse ––– ––– 10 S p-n junction diode. ––– ––– 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V „ ––– 330 500 ns TJ = 25°C, IF = 2.5A ––– 760 1140 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF820APbF 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) 1 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 0.1 4.5V 4.5V 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.0 TJ = 150 ° C 1 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.5A I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 ° C 0.1 1.5 1.0 0.5 0.01 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF820APbF 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 20 ID = 2.5A 1000 VGS , Gate-to-Source Voltage (V) VDS = 400V VDS = 250V VDS = 100V 15 C, Capacitance(pF) Ciss 100 10 Coss 10 5 Crss 1 1 10 100 1000 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 150 ° C 10 10us 1 100us 1 TJ = 25 ° C 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF820APbF 3.0 V DS VGS RG RD 2.5 D.U.T. + ID , Drain Current (A) 2.0 -VDD 10V 1.5 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 0.5 0.0 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF820APbF EAS , Single Pulse Avalanche Energy (mJ) 15V 300 TOP 250 VDS L DRIVER BOTTOM ID 1.1A 1.6A 2.5A 200 RG 20V D.U.T IAS tp + V - DD A 150 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD 700 Charge V DSav , Avalanche Voltage ( V ) VG 650 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 600 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 550 0.0 0.5 1.0 1.5 2.0 2.5 IAV , Avalanche Current ( A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRF820APbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF820APbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET GATE 1- LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 14.09 (.555) 13.47 (.530) 2 1- GATE- DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP LE : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB LY L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C Notes:  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 45mH TJ ≤ 150°C RG = 25Ω, IAS = 2.5A. (See Figure 12) max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ƒ ISD ≤ 2.5A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 8 www.irf.com