IRF840AS

PD- 95143 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free l HEXFET® Power MOSFET IRF840ASPbF IRF840ALPbF ID 8.0A VDSS 500V RDS(on) max 0.85Ω Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) D2Pak IRF840AS TO-262 IRF840AL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current  † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through † are on page 10 Notes  www.irf.com 1 04/21/04 IRF840AS/LPbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Min. 3.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.58 ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 11 23 26 19 1018 155 8.0 1490 42 56 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.85 Ω VGS = 10V, ID = 4.8A „ 4.0 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 „ † ––– VDD = 250V ––– ID = 8.0A ns ––– RG = 9.1Ω ––– RD = 31Ω,See Fig. 10 „† ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V … † Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 510 8.0 13 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– ––– Max. 1.0 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V „ ––– 422 633 ns TJ = 25°C, IF = 8.0A ––– 2.0 3.0 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF840AS/LPbF 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 1 1 4.5V 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 VDS , Drain-to-Source Voltage (V) 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID 8.0  = 7.4A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 ° C  2.0 TJ = 25 ° C  1 1.5 1.0 0.5 0.1 4.0  V DS = 50V 20µs PULSE WIDTH 7.0 8.0 5.0 6.0 9.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF840AS/LPbF 100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 20 8.0 ID = 7.4 A  VGS , Gate-to-Source Voltage (V) 10000 16  VDS = 400V VDS = 250V VDS = 100V C, Capacitance(pF) 1000 Ciss Coss 12 100 8 10 Crss 4 1 1 10 100 1000 0  FOR TEST CIRCUIT SEE FIGURE 13 30 0 10 20 40 VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on)  10us 10 I D , Drain Current (A) TJ = 150 ° C  10  100us  1ms 1 1 TJ = 25 ° C   10ms 0.1 0.2 V GS = 0 V  0.5 0.8 1.1 1.4 0.1  TC = 25 °C TJ = 150 °C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF840AS/LPbF 8.0 VDS VGS RD I D , Drain Current (A) 6.0 RG D.U.T. + -VDD 10V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) www.irf.com 5 IRF840AS/LPbF 1 5V 1200 EAS , Single Pulse Avalanche Energy (mJ) VDS L D R IV E R 1000  TOP BOTTOM ID 3.6A 5.1A 8.0A 800 RG 20V D .U .T IA S tp + V - DD A 600 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD 610 VG V DSav , Avalanche Voltage ( V ) 600 590 580 570 560 550 540 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 0.0 1.0 2.0 3.0 4.0 5.0 6.0 IAV , Avalanche Current ( A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRF840AS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF840AS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S WIT H L OT CODE 80 24 AS S E MB L E D ON WW 0 2, 2 000 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 53 0S D AT E CODE YE AR 0 = 20 00 WE E K 02 L IN E L OR INT E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 20 00 WE E K 02 A = AS S E MB L Y S IT E CODE 8 www.irf.com IRF840AS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMP L E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRF840AS/LPbF D2Pak Tape & Reel InforTRR 1 .6 0 ( .06 3 ) 1 .5 0 ( .05 9 ) 4 .10 ( .1 6 1 ) 3 .90 ( .1 5 3 ) 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F E E D D IR E C T I O N 1 .8 5 ( .07 3 ) 1 .6 5 ( .06 5 ) 1 1 .6 0 ( .4 5 7 ) 1 1 .4 0 ( .4 4 9 ) 1 5 .4 2 ( .6 0 9 ) 1 5 .2 2 ( .6 0 1 ) 2 4 .3 0 ( .9 5 7 ) 2 3 .9 0 ( .9 4 1 ) TRL 1 0 . 9 0 ( .4 2 9 ) 1 0 . 7 0 ( .4 2 1 ) 1 .7 5 ( .0 6 9 ) 1 .2 5 ( .0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D I R E C T IO N 1 3 .5 0 ( .5 3 2 ) 1 2 .8 0 ( .5 0 4 ) 2 7 .40 ( 1 .0 79 ) 2 3 .90 ( .9 4 1 ) 4 330.00 ( 14.173 ) M A X. 6 0 .00 ( 2 .3 6 2 ) M IN . N OT ES : 1 . C O M F O R M S T O E IA -4 1 8. 2 . C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 3 0.4 0 ( 1 .1 97 ) M AX. 26.40 ( 1.039 ) 24.40 ( .961 ) 4 3 Notes:  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 16mH TJ ≤ 150°C RG = 25Ω, IAS = 8.0A. (See Figure 12) max. junction temperature. (See fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ƒ ISD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, † Uses IRF840A data and test conditions * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com