IRF8513PBF

PD - 96196 IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) V DSS 30V R DS(on) m ax Q1 15.5m @VGS = 1 0V Q2 12.7m @VGS = 1 0V : : ID 8.0A 11A B      9 T ÃÃ9! T ÃÃ9! T ÃÃ9! SO-8 T!  T!  B!  Description The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 8.0 6.2 64 1.5 1.05 0.01 Q2 Max. Units V c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 11 9.0 88 2.4 1.68 0.02 -55 to + 175 A W W/°C °C Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 42 100 Q2 Max. 42 62.5 Units °C/W Notes  through … are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/05/08 IRF8513PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. 30 ––– ––– ––– ––– ––– ––– 1.35 ––– ––– ––– ––– ––– ––– 19 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.021 0.021 12.5 18.1 10.2 14.2 1.8 -6.5 -6.9 ––– ––– ––– ––– ––– ––– 5.7 7.6 1.2 1.7 0.68 1.0 2.2 3.1 1.6 1.9 2.9 4.0 3.9 5.2 2.1 1.4 8.0 8.9 8.5 10.7 8.8 9.3 5.7 5.0 766 1024 172 238 83 116 Max. ––– ––– ––– 15.5 22.2 12.7 16.9 2.35 ––– ––– 1.0 150 100 -100 ––– ––– 8.6 11.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 3.2 3.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Units Conditions VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.0A VGS = 4.5V, ID = 6.4A VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.6A Q1: VDS = VGS, ID = 25µA Q2: VDS = VGS, ID = 25µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 6.4A VDS = 15V, ID = 8.6A RDS(on) Static Drain-to-Source On-Resistance mΩ V mV/°C µA nA S e e e e Q1 VDS = 15V VGS = 4.5V, ID = 6.4A nC Q2 VDS = 15V VGS = 4.5V, ID = 8.6A See Fig. 31a &31b nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Ω Q1 VDD = 15V, VGS = 4.5V ID = 6.4A RG = 1.8Ω See Fig.30a & 30b Q2 VDD = 15V, VGS = 4.5V ID = 8.6A RG = 1.8W VGS = 0V VDS = 15V ƒ = 1.0MHz ns pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c d Q1 Max. 49 6.4 Q2 Max. 70 8.6 Units mJ A Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Min. Typ. Max. Units Conditions Q1 ––– ––– 1.9 MOSFET symbol A Q2 ––– ––– 3.0 showing the integral reverse Q1 ––– ––– 64 A p-n junction diode. Q2 ––– ––– 88 TJ = 25°C, IS = 6.4A, VGS = 0V Q1 ––– ––– 1.0 V TJ = 25°C, IS = 8.6A, VGS = 0V Q2 ––– ––– 1.0 Q1 TJ = 25°C, IF = 6.4A, Q1 ––– 15 23 ns VDD = 15V, di/dt = 100A/µs Q2 ––– 17 26 Q2 TJ = 25°C, IF = 8.6A, Q1 ––– 7.2 11 nC Q2 ––– 9.3 14 VDD = 15V, di/dt = 100A/µs Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD) c Reverse Recovery Time Reverse Recovery Charge Forward Trun-On Time e e e e 2 www.irf.com Typical Characteristics 100 IRF8513PbF 100 Q1 - Control FET TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V Q2 - Synchronous FET TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 1 1 0.1 2.5V Tj ≤60µs PULSE WIDTH = 25°C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 2.5V Tj ≤60µs PULSE WIDTH = 25°C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V Fig 2. Typical Output Characteristics 100 TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 2.5V 1 2.5V 1 ≤60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 100 100 Fig 4. Typical Output Characteristics ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 T J = 175°C 10 T J = 175°C TJ = 25°C 1 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 6 VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics www.irf.com 3 IRF8513PbF Q1 - Control FET 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Typical Characteristics 10000 Q2 - Synchronous FET VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) C, Capacitance (pF) 1000 Ciss Coss 1000 Ciss Coss 100 Crss 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 10 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 14.0 VGS, Gate-to-Source Voltage (V) Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 14.0 ID= 8.6A VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 0 2 4 6 VDS= 24V VDS= 15V VGS, Gate-to-Source Voltage (V) 12.0 ID= 6.4A 12.0 10.0 8.0 6.0 4.0 2.0 0.0 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) QG, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 100µsec 10 1msec 1 10msec T A = 25°C Tj = 175°C Single Pulse 0.1 0 1 10 100 100µsec 10 1msec 10msec 1 T A = 25°C Tj = 175°C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com Typical Characteristics Q1 - Control FET 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513PbF Q2 - Synchronous FET 2.0 ID = 11A VGS = 10V 1.5 ID = 8.0A VGS = 10V 1.5 1.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120140160 180 T J , Junction Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 100 Fig 14. Normalized On-Resistance vs. Temperature 100 ISD, Reverse Drain Current (A) ISD, Reverse Drain Current (A) 10 T J = 175°C T J = 175°C 10 T J = 25°C VGS = 0V T J = 25°C VGS = 0V 1.0 0.2 0.8 1.4 2.0 2.6 3.2 3.8 VSD, Source-to-Drain Voltage (V) 1.0 0.1 0.7 1.3 1.9 2.5 3.1 3.7 4.3 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) Fig 16. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) 30 ID = 11A 25 50 45 40 35 30 25 20 15 10 2 4 6 8 10 T J = 25°C TJ = 125°C ID = 8.0A 20 T J = 125°C 15 T J = 25°C 10 2 4 6 8 10 VGS, Gate -to -Source Voltage (V) VGS, Gate -to -Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage Fig 18. Typical On-Resistance vs.Gate Voltage www.irf.com 5 IRF8513PbF Q1 - Control FET 9 8 7 ID, Drain Current (A) Typical Characteristics Q2 - Synchronous FET 12 10 ID, Drain Current (A) 6 5 4 3 2 1 0 25 50 75 100 125 150 175 T A , Ambient Temperature (°C) 8 6 4 2 0 25 50 75 100 125 150 175 T A , Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.5 VGS(th) , Gate Threshold Voltage (V) Fig 20. Maximum Drain Current vs. Ambient Temp. 2.5 VGS(th) , Gate Threshold Voltage (V) 2.0 ID = 250µA 1.5 2.0 ID = 250µA 1.5 ID = 25µA ID = 25µA 1.0 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 21. Threshold Voltage vs. Temperature 250 EAS , Single Pulse Avalanche Energy (mJ) EAS , Single Pulse Avalanche Energy (mJ) Fig 22. Threshold Voltage vs. Temperature 300 200 ID 2.13A 4.20A BOTTOM 6.40A TOP 250 200 150 100 50 0 ID 2.62A 5.45A BOTTOM 8.60A TOP 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) 25 50 75 100 125 150 175 Fig 23. Maximum Avalanche Energy vs. Drain Current Fig 24. Maximum Avalanche Energy vs. Drain Current Starting T J , Junction Temperature (°C) 6 www.irf.com IRF8513PbF 1000 Thermal Response ( Z thJA ) °C/W 100 10 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 R7 R7 R8 R8 τA τ1 τ2 τ2 τ3 τ3 τ4 τ4 τ5 τ5 τ6 τ6 τ7 τ7 Ri (°C/W) 0.16165 0.32401 0.610673 1.3993 1.8271 τA τ i (sec) 0.000010 0.000015 0.000020 0.001289 0.000340 0.027339 23.89834 15.5964 24.1639 Ci= τ i/Ri Ci= τ i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 55.9172 0.716225 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 1000 Thermal Response ( Z thJA ) °C/W 100 10 1 0.1 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 R7 R7 R8 R8 τA τ1 τ2 τ2 τ3 τ3 τ4 τ4 τ5 τ5 τ6 τ6 τ7 τ7 τA Ri (°C/W) 0.12491 0.18285 0.47188 1.08129 1.41186 5.99757 18.93874 τi (sec) 0.000010 0.000012 0.000020 0.001289 0.000340 0.013743 31.39834 Ci= τ i/Ri Ci= τ i/Ri Notes: 34.29159 0.682685 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 100 1000 1E-005 0.0001 0.001 0.01 Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2) t1 , Rectangular Pulse Duration (sec) Fig 27. Layout Diagram www.irf.com 7 IRF8513PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 29a. Unclamped Inductive Test Circuit V DS V GS RG RD Fig 29b. Unclamped Inductive Waveforms VDS 90% D.U.T. + - V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) tr td(off) tf Fig 30a. Switching Time Test Circuit Fig 30b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K 20K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 31a. Gate Charge Test Circuit Fig 31b. Gate Charge Waveform 8 www.irf.com IRF8513PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ à Ã'ƒ HDGGDH@U@ST HDI H6Y "$ &$   !$ "" $  ( !$ #' $ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ $ # !& Ã'ƒ à 9 6 ' & ! % " $ $ # 7 9DH 6 6 i p 9 @ r r C F G ’ % @ C !$Ãb dà 6 %Y r r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 APPUQSDIU IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF8513PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF8513PbF Orderable part number IRF8513PbF IRF8513TRPbF Package Type SO-8 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Qualification Information† Qualification level Consumer †† (per JEDEC JESD47F††† guidelines) SO-8 MSL1 (per JEDEC J-STD-020D†††) Yes Moisture Sensitivity Level RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://ww.irf.com Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.4mH, RG = 25Ω, IAS = 6.4A (Q1) & L = 1.87mH, RG = 25Ω, IAS = 8.6A(Q2) ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. … Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/2008 www.irf.com 11