IRF8734PBF

PD - 96226 IRF8734PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS RDS(on) max Qg (typ.) 30V 3.5m @VGS = 10V 20nC : S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Power Dissipation Pulsed Drain Current Max. 30 ± 20 21 17 168 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient f g Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 10 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 2/12/09 IRF8734PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 85 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.023 2.9 4.2 1.80 -6.5 ––– ––– ––– ––– ––– 20 5.2 2.3 6.9 5.4 9.2 15 1.7 13 16 15 8.0 3175 627 241 ––– ––– 3.5 5.1 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 21A mΩ VGS = 4.5V, ID = 17A e e 2.35 V VDS = VGS, ID = 50µA ––– mV/°C VDS = 24V, VGS = 0V 1.0 µA VDS = 24V, VGS = 0V, TJ = 125°C 150 100 -100 ––– 30 ––– ––– ––– ––– ––– ––– 3.1 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF nA S VGS = 20V VGS = -20V VDS = 15V, ID = 17A VDS = 15V VGS = 4.5V ID = 17A See Figs. 16a &16b nC Ω VDD = 15V, VGS = 4.5V ns ID = 17A RG = 1.8Ω See Figs. 15a &15b VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 216 17 Units mJ A VDS = 16V, VGS = 0V nC e Avalanche Characteristics ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 20 25 3.1 A 168 1.0 30 38 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V TJ = 25°C, IF = 17A, VDD = 15V di/dt = 345A/µs Ù e e 2 www.irf.com IRF8734PbF 1000 TOP 1000 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) 100 100 BOTTOM 1 0.1 0.01 2.3V 10 1 2.3V ≤60µs PULSE WIDTH 0.001 0.1 1 Tj = 25°C 0.1 100 0.1 1 10 ≤60µs PULSE WIDTH Tj = 150°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 21A VGS = 10V ID, Drain-to-Source Current (A) 100 10 T J = 150°C 1 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 0.1 1.5 2 2.5 3 3.5 4 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF8734PbF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 ID= 17A VDS= 24V VDS= 15V C, Capacitance (pF) 10000 Ciss 1000 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 5 10 15 20 25 30 35 40 45 50 55 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec ISD, Reverse Drain Current (A) 100 TJ = 150°C 10 ID, Drain-to-Source Current (A) 100 10 1msec 1 TJ = 25°C 1 T A = 25°C VGS = 0V Tj = 150°C Single Pulse 0.1 0 1 10msec 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF8734PbF 25 VGS(th) , Gate Threshold Voltage (V) 2.5 20 ID, Drain Current (A) 2.0 15 1.5 ID = 50µA 10 5 1.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( Z thJA ) °C/W D = 0.50 10 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τa C τ τ1 τ2 τ3 τ4 τ4 1 Ri (°C/W) 9.66830 16.3087 20.7805 3.14828 0.169346 11.46293 1.815389 0.005835 τi (sec) 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 100 1000 0.001 1E-006 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8734PbF RDS(on), Drain-to -Source On Resistance (m Ω) 20 ID = 21A 15 1000 EAS , Single Pulse Avalanche Energy (mJ) 900 800 700 600 500 400 300 200 100 0 25 50 75 ID TOP 1.26A 2.03A BOTTOM 17A 10 TJ = 125°C 5 T J = 25°C 0 2 4 6 8 10 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp 15V VDS L DRIVER RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + - VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 6 www.irf.com IRF8734PbF Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG * • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs www.irf.com 7 IRF8734PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ Ã'ƒ à HDGGDH@U@ST HDI H6Y "$ &$   !$ "" $  ( !$ #' $ "' # !&ÃÃ76TD8 %"$ÃÃ76TD8 $' %! !$ $ # !& Ã'ƒ à % @ $ # C !$Ãb dà 6 %Y r r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 APPUQSDIU IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ 'YÃ&!Ãb!'d %#%Ãb!$$d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U "Yà !&Ãb$d 'Yà &'Ãb&d DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF8734PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF8734PbF Orderable part number IRF8734PbF IRF8734TRPbF Package Type SO-8 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Qualification Information Qualification level † Consumer †† (per JEDEC JESD47F††† guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D†††) Moisture Sensitivity Level RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.69mH RG = 25Ω, IAS = 16A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board … Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009 10 www.irf.com