IRF8736PBF

PD - 97120 IRF8736PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead -Free VDSS RDS(on) max Qg Typ. 30V 4.8m @VGS = 10V 17nC : S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 ± 20 18 14.4 144 2.5 1.6 0.02 -55 to + 150 Units V f f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 08/1/07 IRF8736PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 52 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.022 3.9 5.5 1.8 -6.1 ––– ––– ––– ––– ––– 17 4.4 1.9 5.8 4.9 7.7 7.1 1.3 12 15 13 7.5 2315 449 219 ––– ––– 4.8 6.8 2.35 ––– 1.0 150 100 -100 ––– 26 ––– ––– ––– ––– ––– ––– 2.2 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– nC Ω nC V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 18A V VGS = 4.5V, ID = 14.4A VDS = VGS, ID = 50µA e e mV/°C µA VDS = 24V, VGS = 0V nA S VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 14.4A VDS = 15V VGS = 4.5V ID = 14.4A See Fig. 16 VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 14.4A ns e RG = 1.8Ω See Fig. 14 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 126 14.4 Units mJ A pF Avalanche Characteristics EAS IAR ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 16 19 3.1 A 144 1.0 24 29 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 14.4A, VGS = 0V TJ = 25°C, IF = 14.4A, VDD = 10V di/dt = 300A/µs Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF8736PbF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 10 0.1 1 2.3V ≤ 60µs PULSE WIDTH Tj = 150°C 0.01 2.3V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 10 100 0.1 1 0.001 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 18A VGS = 10V 1.5 10 TJ = 150°C 1 TJ = 25°C 0.1 1.0 VDS = 15V ≤ 60µs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF8736PbF 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5 ID= 14.4A 4 VDS= 24V VDS= 15V C, Capacitance (pF) Ciss 1000 3 Coss Crss 2 1 100 1 10 100 0 0 4 8 12 16 20 Qg, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 100 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 100µsec 1msec 10msec 1 TJ = 150°C 10 10 TJ = 25°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 TA = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 0.1 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF8736PbF 20 2.4 16 VGS(th) Gate threshold Voltage (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID , Drain Current (A) 12 ID = 50µA 8 4 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TA, Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature 100 D = 0.50 Thermal Response ( ZthJA ) 10 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τa τ2 τ3 τ4 τ4 1 0.1 Ci= τi/Ri Ci i/Ri Ri (°C/W) τι (sec) 1.396574 0.000246 7.206851 0.037927 27.1278 1.0882 14.26877 30.3 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8736PbF 600 15V EAS, Single Pulse Avalanche Energy (mJ) 500 VDS L DRIVER 400 ID 1.28A 1.75A BOTTOM 14.4A TOP RG 20V D.U.T IAS tp + V - DD A 300 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 Starting T J, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS RD V DS V GS RG Fig 12b. Unclamped Inductive Waveforms D.U.T. + -V DD Current Regulator Same Type as D.U.T. V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors 10% VGS td(on) tr t d(off) tf Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 www.irf.com IRF8736PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRF8736PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ $ # 7 9 DH 6 6 i p 9 @ r r C F G ’ DI8 C@ T H DI H 6Y %'' $"! (' # !  " &$ ('  (%'  '(  $&#  #(& $ÃÃ76T D8 !$ÃÃ76T D8 !## !!'#  (% (( $  % Ã'ƒ à H DGGDH @ U@S T H DI H 6Y "$ &$   !$ "" $  ( !$ #' $ "' # !&ÃÃ7 6TD8 %"$ÃÃ76T D8 $' %! !$ $ # !& à Ã'ƒ % @ C !$Ãb dà 6 %Y r r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 APPUQSDIU IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U 'Yà &'Ãb&d DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com IRF8736PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.21mH, RG = 25Ω, IAS = 14.4A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board … Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.8/2007 www.irf.com 9