IRF9310PBF

PD - 97437A IRF9310PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) -30 4.6 -20 V mΩ A 6 6 6 *         ' ' ' ' ID (@TA = 25°C) SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Low RDSon (≤ 4.6mΩ) Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number IRF9310PbF IRF9310TRPbF Package Type SO8 SO8 Lower Conduction Losses results in Multi-Vendor Compatibility ⇒ Environmentally Friendlier Note Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. -30 ± 20 -20 -16 -160 2.5 1.6 0.02 -55 to + 150 Units V f f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Notes  through … are on page 2 www.irf.com 1 03/19/2010 IRF9310PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Min. Typ. Max. Units -30 ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.020 3.9 5.8 -1.8 -5.8 ––– ––– ––– ––– ––– 58 110 17 28 2.8 25 47 65 70 5250 1300 880 ––– ––– 4.6 6.8 -2.4 V Conditions VGS = 0V, ID = -250µA V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -20A mΩ VGS = -4.5V, ID = -16A e e V VDS = VGS, ID = -100µA ––– mV/°C VDS = -24V, VGS = 0V -1.0 µA VDS = -24V, VGS = 0V, TJ = 125°C -150 -100 100 ––– ––– 165 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF nA S nC nC Ω ns VDD = -15V, VGS = -4.5V ID = -1.0A RG = 1.8Ω See Figs. 20a &20b VGS = 0V VDS = -15V ƒ = 1.0MHz Max. 630 -16 Units mJ A VGS = -20V VGS = 20V VDS = -10V, ID = -16A VDS = -15V, VGS = -4.5V, ID = - 16A VGS = -10V VDS = -15V ID = -16A h Total Gate Charge h Turn-On Delay Time Rise Time h Gate-to-Drain Charge h Gate Resistance h Gate-to-Source Charge Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter e Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr ™ d Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 71 12 -2.5 A -160 -1.2 107 18 Typ. ––– ––– V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V di/dt = 100A/µs Max. 20 50 G S D Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge e TJ = 25°C, IF = -2.5A, VDD = -24V Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient e f g Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. … Rθ is measured at TJ of approximately 90°C. † For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9310PbF 1000 ≤60µs PULSE WIDTH Tj = 25°C -ID, Drain-to-Source Current (A) TOP VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V 1000 ≤60µs PULSE WIDTH Tj = 150°C -ID, Drain-to-Source Current (A) TOP 100 10 BOTTOM 100 BOTTOM VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V 1 10 0.1 -2.3V 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -2.3V 1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.6 ID = -20A VGS = -10V -I D, Drain-to-Source Current (Α) 1.4 100 1.2 T J = 150°C 10 T J = 25°C VDS = -10V ≤60µs PULSE WIDTH 1.0 1 2 3 4 5 1.0 0.8 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 14.0 ID= -16A -VGS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= -24V VDS= -15V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 25 50 75 100 125 150 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF9310PbF 1000.00 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100.00 T J = 150°C 10.00 100 1msec 10 1.00 T J = 25°C 1 T A = 25°C VGS = 0V 0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -VSD, Source-to-Drain Voltage (V) 0.1 0.1 Tj = 150°C Single Pulse 1 10msec 10 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 20 -V GS(th), Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 2.5 -I D, Drain Current (A) 15 2.0 10 ID = -100µA 1.5 5 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( Z thJA ) °C/W Fig 10. Threshold Voltage vs. Temperature 10 1 0.1 0.01 0.001 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000 0.0001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com RDS(on) , Drain-to -Source On Resistance (m Ω) ID = -20A 10 RDS(on), Drain-to -Source On Resistance ( mΩ) 12 IRF9310PbF 14 12 10 8 6 VGS = -10V 4 2 0 20 40 60 80 100 120 140 160 -I D, Drain Current (A) VGS = -4.5V 8 6 TJ = 125°C 4 TJ = 25°C 2 2 4 6 8 10 12 14 16 18 20 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 2700 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical On-Resistance vs. Drain Current 1000 2400 2100 1800 1500 1200 900 600 300 0 25 50 75 Single Pulse Power (W) ID TOP -1.8A -2.7A BOTTOM -16A 800 600 400 200 100 125 150 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Starting T J , Junction Temperature (°C) Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 16. Typical Power vs. Time D.U.T * Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices www.irf.com Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRF9310PbF Id Vds Vgs L 0 DUT 20K 1K S S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform VDS L I AS RG -V GS -20V D.U.T IAS DRIVER 0.01Ω VDD A tp tp V(BR)DSS 15V Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms VDS VGS RG RD td(on) tr t d(off) tf D.U.T. VGS 10% + -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 20a. Switching Time Test Circuit 6 - V DD 90% VDS Fig 20b. Switching Time Waveforms www.irf.com IRF9310PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G ’ % @ $ # C !$Ãb dà 6 %Y r DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ à Ã'ƒ HDGGDH@U@ST HDI H6Y &$ "$ !$   $ ""  ( !$ $ #' # "' !&ÃÃ76TD8 %"$ÃÃ76TD8 %! $' $ !$ !& # à Ã'ƒ r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 APPUQSDIU IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9310PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level † Consumer †† (per JEDEC JESD47F††† guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D†††) Moisture Sensitivity Level RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Date Comment Figure 16, Power vs. Time curve is modified and updated. All other parameters remain unchanged. Revision History 3/18/2010 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010 8 www.irf.com