IRF9333PBF

PD - 97523 IRF9333PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 19.4 32.5 14 -9.2 V m m : : 6 6 6 *         ' ' ' ' RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) nC A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number IRF9333PbF IRF9333TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. -30 ± 20 -9.2 -7.3 -75 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f Power Dissipation c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Notes  through † are on page 2 www.irf.com 1 6/21/10 IRF9333PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Min. Typ. Max. Units -30 ––– ––– ––– -1.3 ––– ––– ––– ––– ––– 13 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.019 15.6 25.6 -1.8 -5.7 ––– ––– ––– ––– ––– 14 25 3.5 6.4 15 16 44 55 49 1110 230 160 ––– ––– 19.4 32.5 -2.4 ––– -1.0 -150 -100 100 ––– ––– 38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF ns Ω nC V Conditions VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -9.2A mΩ VGS = -4.5V, ID = -7.5A e e V mV/°C μA nA S nC VDS = VGS, ID = -25μA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VDS = -10V, ID = -7.5A VDS = -15V, VGS = -4.5V, ID = - 7.5A VGS = -10V VDS = -15V ID = -7.5A VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8Ω See Figs. 20a &20b VGS = 0V VDS = -25V ƒ = 1.0MHz Max. 100 -7.5 Units mJ A h Total Gate Charge h Total Gate Charge h Gate-to-Drain Charge h Gate Resistance h Gate-to-Source Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter e Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr ™ d Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 24 15 -2.5 A -75 -1.2 36 23 Typ. ––– ––– V ns nC showing the Conditions MOSFET symbol integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V di/dt = 100A/μs Max. 20 50 G S D Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge e TJ = 25°C, IF = -2.5A, VDD = -24V Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient e f g Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. … Rθ is measured at TJ of approximately 90°C. † For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9333PbF 100 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V 100 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V -ID, Drain-to-Source Current (A) 10 BOTTOM -ID, Drain-to-Source Current (A) 10 BOTTOM 1 1 -2.5V 0.1 -2.5V ≤60μs PULSE WIDTH Tj = 25°C ≤60μs PULSE WIDTH Tj = 150°C 0.1 100 0.1 1 10 100 0.01 0.1 1 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -9.2A 1.4 -ID, Drain-to-Source Current (A) VGS = -10V 10 TJ = 150°C 1 1.2 TJ = 25°C 1.0 0.1 VDS = -15V 0.01 1.0 2.0 3.0 0.8 ≤ 60μs PULSE WIDTH 4.0 5.0 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance vs. Temperature 14 -VGS, Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 ID= -7.5A VDS= -24V VDS= -15V VDS= -6.0V C, Capacitance(pF) 1000 Ciss Coss Crss 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 8 16 24 32 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF9333PbF 100 TJ = 150°C 1000 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec 10 10msec 10 1 TJ = 25°C 1 VGS = 0V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -VSD, Source-to-Drain Voltage (V) 0.1 TA = 25°C Tj = 150°C Single Pulse 0.1 1 DC 10 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10 -VGS(th), Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 2.5 8 -ID, Drain Current (A) 2.0 6 ID = -25μA 4 1.5 2 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( ZthJA ) °C/W Fig 10. Threshold Voltage vs. Temperature 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF9333PbF Ω RDS(on), Drain-to -Source On Resistance (m ) ID = -9.4A 50 ( RDS(on), Drain-to -Source On Resistance mΩ) 60 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 -ID, Drain Current (A) VGS = -10V VGS = -4.5V 40 30 TJ = 125°C TJ = 25°C 10 2 4 6 8 10 12 14 16 18 20 20 -VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 420 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical On-Resistance vs. Drain Current 1000 360 300 240 180 120 60 0 25 50 75 Single Pulse Power (W) ID TOP -2.1A -3.0A BOTTOM -7.5A 800 600 400 200 0 100 125 150 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Starting TJ , Junction Temperature (°C) Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 16. Typical Power vs. Time D.U.T * Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices www.irf.com Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRF9333PbF Id Vds Vgs L 0 DUT 20K 1K S S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform VDS L I AS RG -V GS -20V D.U.T IAS DRIVER 0.01Ω VDD A tp tp V(BR)DSS 15V Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms VDS VGS RG RD td(on) tr t d(off) tf D.U.T. VGS 10% + -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 20a. Switching Time Test Circuit 6 - V DD 90% VDS Fig 20b. Switching Time Waveforms www.irf.com IRF9333PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G ’ % @ $ # C !$Ãb dà 6 %Y r DI8C@T HDI H6Y $"! %'' # ('  " ! &$ ('  '(  (%'  #(&  $&# $ÃÃ76TD8 !$ÃÃ76TD8 !!'# !## ((  (%  % $ à Ã'ƒ HDGGDH@U@ST HDI H6Y &$ "$ !$   $ ""  ( !$ $ #' # "' !&ÃÃ76TD8 %"$ÃÃ76TD8 %! $' $ !$ !& # à Ã'ƒ r 6 FÑÃ#$ƒ 8  Ãb#dà ’ 'YÃG & 'YÃp 'YÃi !$Ãb dà 6 867 APPUQSDIU IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9à $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIBÃUP ÃÃÃÃÃ6ÃTV7TUS6U@ 'YÃ&!Ãb!'d %#%Ãb!$$d "Yà !&Ãb$d 'Yà &'Ãb&d SO-8 Part Marking Information @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&  ÃHPTA@U 96U@Ã8P9@Ã`XX QÃ2Ã9DTBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9333PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level † Consumer †† (per JEDEC JESD47F††† guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D†††) Moisture Sensitivity Level RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/2010 8 www.irf.com