PD - 95411
IRF9520NPbF
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = -100V RDS(on) = 0.48Ω
G S
ID = -6.8A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
-6.8 -4.8 -27 48 0.32 ± 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
3.1 62
Units
°C/W
06/15/04
IRF9520NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -100 -2.0 1.4
Typ. -0.10 14 47 28 31 4.5 7.5 350 110 70
Max. Units Conditions V VGS = 0V, ID = -250µA V/°C Reference to 25°C, ID = -1mA 0.48 Ω VGS = -10V, ID = -4.0A -4.0 V VDS = V GS, ID = -250µA S VDS = -50V, ID = -4.0A -25 VDS = -100V, VGS = 0V µA -250 VDS = -80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 and 13 VDD = -50V ID = -4.0A ns RG = 22Ω RD = 12Ω, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -6.8 showing the A G integral reverse -27 p-n junction diode. S -1.6 V TJ = 25°C, IS = -4.0A, V GS = 0V 100 150 ns TJ = 25°C, IF = -4.0A 420 630 nC di/dt = -100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25°C, L = 18 mH
max. junction temperature. ( See fig. 11 )
ISD ≤ -4.0A, di/dt ≤ -300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
RG = 25Ω, IAS = -4.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF9520NPbF
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
10
1
1
-4.5V
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-4.5V
0.1 0.1 1
20µs PULSE WIDTH TJ = 25 °C
10 100
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -6.7A
-I D , Drain-to-Source Current (A)
TJ = 175 ° C
10
2.0
TJ = 25 ° C
1.5
1.0
1
0.5
0.1
V DS = 10V 20µs PULSE WIDTH 4 5 6 7 8 9 10
0.0 -60 -40 -20 0
VGS = -10V
20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF9520NPbF
800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -4.0 A
16
VDS = -80V VDS = -50V VDS = -20V
C, Capacitance (pF)
600
Ciss
12
400
Coss Crss
8
200
4
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 5 10 15 20 25
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
-ID , Drain Current (A) I
TJ = 175 ° C
10
10
100us
TJ = 25 ° C
1ms 1
1
10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
0.1
TC = 25 ° C TJ = 175 ° C Single Pulse
1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF9520NPbF
VDS
8.0
RD
V GS RG
D.U.T.
+
-ID , Drain Current (A)
6.0
-10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VGS 10%
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150 175
90% VDS
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
VDD
IRF9520NPbF
VDS
L
400
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
VDD A DRIVER
ID -1.7A -2.5A BOTTOM -4.0A TOP
-20V
tp
0.01Ω
300
200
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
100
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
tp V(BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50KΩ 12V .2µF .3µF
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRF9520NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ V DD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRF9520NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPAC K 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E X AMP L E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
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