IRF9530N

PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. -14 -10 -56 79 0.53 ± 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.9 ––– 62 Units °C/W 5/13/98 IRF9530N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 ––– ––– -2.0 3.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 15 58 45 46 4.5 7.5 760 260 170 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.20 Ω VGS = -10V, ID = -8.4A „ -4.0 V VDS = V GS, ID = -250µA ––– S VDS = -50V, ID = -8.4A -25 VDS = -100V, VGS = 0V µA -250 VDS = -80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 58 ID = -8.4A 8.3 nC VDS = -80V 32 VGS = -10V, See Fig. 6 and 13 „ ––– VDD = -50V ––– ID = -8.4A ns ––– RG = 9.1Ω ––– RD = 6.2Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -14 showing the A G integral reverse ––– ––– -56 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V „ ––– 130 190 ns TJ = 25°C, I F = -8.4A ––– 650 970 nC di/dt = -100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 7.0mH RG = 25Ω, IAS = -8.4A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF9530N 100 V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 100 -ID , D rain-to-S ou rc e C urre nt (A ) 10 -ID , D rain-to-S ource C urrent (A ) V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 1 1 - 4.5 V 0.1 0.1 1 2 0µ s P U LS E W ID TH T c = 2 5°C A 10 100 0.1 0.1 1 2 0 µ s P U LS E W ID T H T C = 1 75 °C 10 A 100 -VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V olta g e ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID = -14A R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , D rain-to-S ource C urrent (A) 2.0 T J = 2 5 °C 10 TJ = 1 7 5 °C 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = - 5 0 V 2 0µ s P U L S E W ID TH 8 9 A 10 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 180 -VG S , Ga te -to-Source Volta g e (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9530N 2000 1600 -VGS , Gate-to-Source Voltage (V) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 ID = -8.4A VDS = -80V VDS = -50V VDS = -20V C , Capacitance (pF) 15 1200 C i ss 10 800 C o ss C r ss 5 400 0 1 10 100 A 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 -VD S , D rain-to-S ourc e V olta g e ( V ) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I S D , Reverse D rain Current (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 15 0°C 10 -ID , Drain Current (A) I 100 10us T J = 25 °C 100us 10 1ms 1 0.1 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 10ms 100 1000 1.6 -VS D , S ourc e-to-D rain V oltage (V ) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF9530N 14 VDS 12 RD VGS RG D.U.T. + -ID , Drain Current (A) 8 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 4 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 2 VGS 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - 10 VDD IRF9530N VDS L 700 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S D R IV E R 0 .0 1 Ω 600 VD D A ID -3.4A -5.9A BOTTOM -8.4A TOP -2 0 V tp 500 400 300 15V 200 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 IAS Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V ( BR ) DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V .3µF VDS IRF9530N Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF9530N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 2.87 (.11 3) 2.62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB EXAMP : TH IS N IR 1 0 E X A M P L E :L ETH IS IS A N AIR F1 0F1 0 1 0 W H ASSEMB W IT H ITA S S E M B L Y L Y L C CO B M L O T O TO D E D9E 19 B 1 M A A IN TE R N A N A N IN TE R N A TIOTIOL A L R E C TIF R E C TIF IE R IE R IR F IR F 10 1 0 10 1 0 L LOG OGO 9 2 49 2 4 6 6 9B1 M 1 M 9B ASSEMB ASSEMBLY LY LOT O DE DE LOT C CO PA N NU MB P A R T R TU M B E R E R DA C CO D A TE TEO D E D E (Y Y(Y Y W W ) WW) Y Y Y Y Y= A R A R = E YE W= = EE W W W W EWK E K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98