IRF9952QPBF_10

PD - 96115A IRF9952QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 6 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.25Ω Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 0.25 5.0 -55 to + 150 -5.0 SO-8 N-Channel Maximum P-Channel 30 ± 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range 3.5 2.8 16 1.7 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient … Parameter Symbol RθJA Limit 62.5 Units °C/W www.irf.com 1 08/09/10 IRF9952QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 — — — — — — 1.0 -1.0 — — — — — — –– — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.015 — 0.015 — 0.08 0.10 0.12 0.15 0.165 0.250 0.290 0.400 — — — — 12 — 2.4 — — 2.0 — -2.0 — 25 — -25 — ±100 6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 8.8 18 14 28 13 26 20 40 3.0 6.0 6.9 14 190 — 190 — 120 — 110 — 61 — 54 — Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.2A „ VGS = 4.5V, ID = 1.0A „ VGS = -10V, ID = -1.0A „ VGS = -4.5V, ID = -0.50A „ VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 3.5A „ VDS = -15V, I D = -2.3A „ VDS = 24V, VGS = 0V VDS = -24V, V GS = 0V VDS = 24V, V GS = 0V, TJ = 125°C VDS = -24V, V GS = 0V, TJ = 125°C VGS = ±20V N-Channel I D = 1.8A, VDS = 10V, VGS = 10V P-Channel I D = -2.3A, V DS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, R G = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, RD = 10Ω N-Channel V GS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel V GS = 0V, VDS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC „ ns „ pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 1.7 — — -1.3 A — — 16 — — 16 — 0.82 1.2 TJ = 25°C, IS = 1.25A, VGS = 0V ƒ V — -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V ƒ — 27 53 N-Channel ns — 27 54 TJ = 25°C, IF =1.25A, di/dt = 100A/µs — 28 57 P-Channel „ nC TJ = 25°C, IF = -1.25A, di/dt = 100A/µs — 31 62  Repetitive rating; pulse width limited by Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 23 ) … Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 67mH R G = 25 Ω, IAS = -1.3A. www.irf.com 2 N-Channel 100 IRF9952QPbF VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 10 3.0V 20µs PULSE WIDTH TJ = 25°C A 0.1 1 10 3.0V 20µs PULSE WIDTH TJ = 150°C A 0.1 1 10 1 1 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 10 TJ = 25°C TJ = 150°C TJ = 150°C TJ = 25°C 1 1 3.0 3.5 4.0 4.5 V DS = 10V 20µs PULSE WIDTH 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF9952QPbF 2.0 N-Channel 0.12 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 RDS (on) , Drain-to-Source On Resistance (Ω) ID = 2.2A 0.10 VGS = 4.5V 1.0 0.08 0.5 0.06 VGS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.04 0 2 4 6 8 10 12 A TJ , Junction Temperature ( °C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance (Ω) E AS , Single Pulse Avalanche Energy (mJ) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 3 6 9 12 15 100 TOP 80 BOTTOM ID 0.89A 1.6A 2.0A 60 I D = 3.5A 40 20 A 0 25 50 75 100 125 150 A V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com 4 N-Channel 350 IRF9952QPbF ID = 1.8A VDS = 10V 300 VGS , Gate-to-Source Voltage (V) A V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 16 C, Capacitance (pF) 250 Ciss Coss 200 12 150 8 100 Crss 4 50 0 1 10 100 0 0 2 4 6 8 10 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF9952QPbF 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 1 1 -3.0V -3.0V 0.1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 0.1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -ID , Drain-to-Source Current (A) 10 -ISD , Reverse Drain Current (A) 10 TJ = 25°C T J = 150°C 1 TJ = 150°C TJ = 25°C 1 0.1 3.0 4.0 5.0 VDS = -10V 20µs PULSE WIDTH 6.0 7.0 8.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics www.irf.com Fig 15. Typical Source-Drain Diode Forward Voltage 6 P-Channel 2.0 2.5 IRF9952QPbF R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -1.0A RDS(on) , Drain-to-Source On Resistance ( Ω ) 2.0 1.5 1.5 1.0 VGS = -4.5V 1.0 0.5 0.5 VGS = -10V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( °C) -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( Ω ) 0.80 150 EAS , Single Pulse Avalanche Energy (mJ) 120 0.60 ID -0.58A -1.0A BOTTOM -1.3A TOP 90 0.40 I D = -2.3A 60 0.20 30 0.00 0 3 6 9 12 15 A 0 25 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 www.irf.com Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 IRF9952QPbF 400 P-Channel 20 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = -2.3A VDS = -10V 16 C, Capacitance (pF) 300 Ciss Coss 200 12 8 100 Crss 4 0 1 10 100 A 0 0 2 4 6 8 10 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 8 IRF9952QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] F OOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE : T HIS IS AN IR F 7101 (MOS F ET ) DAT E CODE (YWW) P = DE S IGNAT E S LE AD-F R EE PRODU CT (OPT IONAL ) Y = L AS T DIGIT OF T HE YE AR WW = WE EK A = AS S E MB L Y S IT E CODE L OT CODE PART NU MB E R Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ INT E R NAT IONAL R E CT IF IE R L OGO XXXX F 7101 www.irf.com 9 IRF9952QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 www.irf.com 10