IRF9Z24N

PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. -12 -8.5 -48 45 0.30 ± 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 3.3 ––– 62 Units °C/W 8/27/97 IRF9Z24N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆ V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 ––– ––– -2.0 2.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 4.5 7.5 350 170 92 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 0.175 Ω VGS = -10V, I D = -7.2A „ -4.0 V VDS = VGS , ID = -250µA ––– S VDS = -25V, I D = -7.2A -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, T J = 150°C 100 V GS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 V GS = -10V, See Fig. 6 and 13 „ ––– VDD = -28V ––– I D = -7.2A ns ––– RG = 24 Ω ––– RD = 3.7Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -12 showing the A G integral reverse ––– ––– -48 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V „ ––– 47 71 ns TJ = 25°C, IF = -7.2A ––– 84 130 µC di/dt = -100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = -7.2A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF9Z24N 100 V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 2 0µ s PU LS E W ID TH Tc = 2 5°C J 100 -ID , D ra in -to -S o u rce C u rre n t (A ) 10 -ID , D ra in -to -S o u rc e C u rre n t (A ) V GS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 10 - 4.5 V 1 0.1 1 10 -4.5 V A 100 1 0.1 1 2 0 µ s PU LSE W ID TH TC = 1 75°C J 10 100 A -VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, 100 2.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = - 12 A - I D , D ra in-t o-S o urc e C urre nt (A ) 1.5 TJ = 2 5 °C 10 TJ = 1 7 5 °C 1.0 0.5 1 4 5 6 7 V DS = - 2 5 V 2 0 µ s P U L S E W ID T H 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = - 10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9Z24N 700 20 -V G S , G a te -to -S o u rc e V o lta g e (V ) 600 V GS C is s C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd I D = - 7.2 A V DS = - 4 4V V DS = -2 8V 16 C , C a p a c ita n c e (p F ) 500 C is s C os s 400 12 300 8 200 Crs s 4 100 0 1 10 100 A 0 0 5 10 F O R TEST C IR C U IT SEE F IGU R E 1 3 15 20 25 A V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -IS D , R e ve rse D ra in C u rre n t (A ) O PER ATIO N IN TH IS AR EA LIM ITED BY R D S(o n) 1 0µs 10 TJ = 1 50°C TJ = 25 °C -I D , D ra in C u rre n t (A ) 10 100µ s 1 1m s 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VG S = 0 V 1.6 A 1 1 T C = 2 5°C T J = 1 75°C Sin gle Pu lse 10 10m s 100 1.8 A -VS D , S ource-to-Drain V oltage (V ) -VD S , Drain-to-Source V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF9Z24N 12 VDS VGS RD -ID , D ra i n C u rre n t (A m p s ) D.U.T. + 9 -10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 A 175 10% TC , C ase T emperature (°C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 T herm al R esponse (Z th J C ) D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0 .0 2 0 .0 1 S IN G LE P U L S E (T H E R M A L R E S P O N S E ) Notes : 1. D uty fac tor D = t PDM 0.1 t 1 t 2 1 /t 2 0.01 0.00001 2. P ea k TJ = P DM x Z th JC + T C 0.0001 0.001 0.01 0.1 t 1 , R ectan gular P ulse D uratio n (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD A 1 IRF9Z24N E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) VDS L 250 TO P 200 RG D .U .T IA S D R IV E R 0 .0 1 Ω VD D A B OTTO M ID -2.9A -5.1 A -7.2 A - 20V tp 150 100 15V Fig 12a. Unclamped Inductive Test Circuit 50 0 25 50 75 100 125 150 A 175 I AS Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V .3µF VDS IRF9Z24N Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD ] Re-Applied Voltage Inductor Curent Body Diode Forward Drop [ Ripple ≤ 5% ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF9Z24N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 ) 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M BA M 3X 0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 ) 2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H 2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 ) 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E X AM : E X AM PLEPLET:HI T HI S A N AIRF 1010 S IS IS N IRF 1010 W A S A S S E MB W IT H IT H S E MB LY LY LO T CO 9B 9B LO T CO DE DE 1M 1M A A IN TE R NA T A L IN TE R NA T IONION A L R EC T IF R EC T IF IER IER IR F IR F 1010 1010 LO LO GO GO 9246 9246 9B 9B1M 1M A S S EM B A S S EM B LY LY LO T DE DE LO T CO CO P A NU NU M BE P A RT RT M BE R R D A C C OD D A TE TEOD E E (Y W ) (Y YW YW W ) Y Y Y Y YE A R A R = = YE W W = EK W W = W EW E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97